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Si:SrTiO3-Al2O3-Si:SrTiO3 multi-dielectric architecture for metal-insulator-metal capacitor applications
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dc.contributor.author | Dugu, Sita | |
dc.contributor.author | Pavunny, Shojan P. | |
dc.contributor.author | Scott, James Floyd | |
dc.contributor.author | Katiyar, Ram S. | |
dc.date.accessioned | 2016-11-18T16:30:11Z | |
dc.date.available | 2016-11-18T16:30:11Z | |
dc.date.issued | 2016-11-21 | |
dc.identifier | 247491257 | |
dc.identifier | 42dc8109-be40-4c90-863f-9a5bffbf3ccf | |
dc.identifier | 84997282709 | |
dc.identifier | 000388834200016 | |
dc.identifier.citation | Dugu , S , Pavunny , S P , Scott , J F & Katiyar , R S 2016 , ' Si:SrTiO 3 -Al 2 O 3 -Si:SrTiO 3 multi-dielectric architecture for metal-insulator-metal capacitor applications ' , Applied Physics Letters , vol. 109 , no. 21 , 212901 . https://doi.org/10.1063/1.4968185 | en |
dc.identifier.issn | 0003-6951 | |
dc.identifier.uri | https://hdl.handle.net/10023/9848 | |
dc.description.abstract | Metal-insulator-metal (MIM) capacitors comprised of amorphous Si:SrTiO3-Al2O3-Si:SrTiO3 multi-dielectric architecture have been fabricated employing a combination of pulsed laser and atomic layer deposition techniques. The voltage linearity, temperature coefficients of capacitance, dielectric and electrical properties upon thickness were studied under a wide range of temperature (200 – 400 K) and electric field stress (± 1.5 MV/cm). A high capacitance density of 31 fF/µm2, a low voltage coefficient of capacitance of 363 ppm/V2, a low temperature coefficient of capacitance of < 644 ppm/K and an effective dielectric constant of ~133 are demonstrated in a MIM capacitor with ~1.4 nm capacitance equivalent thickness in a ~40 nm thick ultra high-k multi-dielectric stack. All of these properties make this dielectric architecture of interest for next generation highly scaled MIM capacitor applications. | |
dc.format.extent | 5 | |
dc.format.extent | 510675 | |
dc.language.iso | eng | |
dc.relation.ispartof | Applied Physics Letters | en |
dc.subject | QC Physics | en |
dc.subject | T Technology | en |
dc.subject | NDAS | en |
dc.subject.lcc | QC | en |
dc.subject.lcc | T | en |
dc.title | Si:SrTiO3-Al2O3-Si:SrTiO3 multi-dielectric architecture for metal-insulator-metal capacitor applications | en |
dc.type | Journal article | en |
dc.contributor.institution | University of St Andrews. School of Chemistry | en |
dc.contributor.institution | University of St Andrews. School of Physics and Astronomy | en |
dc.contributor.institution | University of St Andrews. Condensed Matter Physics | en |
dc.identifier.doi | https://doi.org/10.1063/1.4968185 | |
dc.description.status | Peer reviewed | en |
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