Si:SrTiO3-Al2O3-Si:SrTiO3 multi-dielectric architecture for metal-insulator-metal capacitor applications
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Metal-insulator-metal (MIM) capacitors comprised of amorphous Si:SrTiO3-Al2O3-Si:SrTiO3 multi-dielectric architecture have been fabricated employing a combination of pulsed laser and atomic layer deposition techniques. The voltage linearity, temperature coefficients of capacitance, dielectric and electrical properties upon thickness were studied under a wide range of temperature (200 – 400 K) and electric field stress (± 1.5 MV/cm). A high capacitance density of 31 fF/µm2, a low voltage coefficient of capacitance of 363 ppm/V2, a low temperature coefficient of capacitance of < 644 ppm/K and an effective dielectric constant of ~133 are demonstrated in a MIM capacitor with ~1.4 nm capacitance equivalent thickness in a ~40 nm thick ultra high-k multi-dielectric stack. All of these properties make this dielectric architecture of interest for next generation highly scaled MIM capacitor applications.
Dugu , S , Pavunny , S P , Scott , J F & Katiyar , R S 2016 , ' Si:SrTiO 3 -Al 2 O 3 -Si:SrTiO 3 multi-dielectric architecture for metal-insulator-metal capacitor applications ' Applied Physics Letters , vol 109 , no. 21 , 212901 . DOI: 10.1063/1.4968185
Applied Physics Letters
© 2016, the Author(s). This work has been made available online in accordance with the publisher’s policies. This is the author created, accepted version manuscript following peer review and may differ slightly from the final published version. The final published version of this work is available at scitation.aip.org / http://dx.doi.org/10.1063/1.4968185
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