Si:SrTiO3-Al2O3-Si:SrTiO3 multi-dielectric architecture for metal-insulator-metal capacitor applications
Abstract
Metal-insulator-metal (MIM) capacitors comprised of amorphous Si:SrTiO3-Al2O3-Si:SrTiO3 multi-dielectric architecture have been fabricated employing a combination of pulsed laser and atomic layer deposition techniques. The voltage linearity, temperature coefficients of capacitance, dielectric and electrical properties upon thickness were studied under a wide range of temperature (200 – 400 K) and electric field stress (± 1.5 MV/cm). A high capacitance density of 31 fF/µm2, a low voltage coefficient of capacitance of 363 ppm/V2, a low temperature coefficient of capacitance of < 644 ppm/K and an effective dielectric constant of ~133 are demonstrated in a MIM capacitor with ~1.4 nm capacitance equivalent thickness in a ~40 nm thick ultra high-k multi-dielectric stack. All of these properties make this dielectric architecture of interest for next generation highly scaled MIM capacitor applications.
Citation
Dugu , S , Pavunny , S P , Scott , J F & Katiyar , R S 2016 , ' Si:SrTiO 3 -Al 2 O 3 -Si:SrTiO 3 multi-dielectric architecture for metal-insulator-metal capacitor applications ' , Applied Physics Letters , vol. 109 , no. 21 , 212901 . https://doi.org/10.1063/1.4968185
Publication
Applied Physics Letters
Status
Peer reviewed
ISSN
0003-6951Type
Journal article
Collections
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