Electro-photo-sensitive memristor for neuromorphic and arithmetic computing
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We present optically and electrically tunable conductance modifications of a site-controlled quantum-dot memristor. The conductance of the device is tuned by electron localization on a quantum dot. The control of the conductance with voltage and low-power light pulses enables applications in neuromorphic and arithmetic computing. As in neural networks, applying pre- and postsynaptic voltage pulses to the memristor allows us to increase (potentiation) or decrease (depression) the conductance by tuning the time difference between the electrical pulses. Exploiting state-dependent thresholds for potentiation and depression, we are able to demonstrate a memory-dependent induction of learning. The discharging of the quantum dot can further be induced by low-power light pulses in the nanowatt range. In combination with the state-dependent threshold voltage for discharging, this enables applications as generic building blocks to perform arithmetic operations in bases ranging from binary to decimal with low-power optical excitation. Our findings allow the realization of optoelectronic memristor-based synapses in artificial neural networks with a memory-dependent induction of learning and enhanced functionality by performing arithmetic operations.
Maier , P , Hartmann , F , Emmerling , M , Schneider , C , Kamp , M , Höfling , S & Worschech , L 2016 , ' Electro-photo-sensitive memristor for neuromorphic and arithmetic computing ' , Physical Review Applied , vol. 5 , no. 5 , 054011 , pp. 1-9 . https://doi.org/10.1103/PhysRevApplied.5.054011
Physical Review Applied
Copyright © 2016, American Physical Society This work is made available online in accordance with the publisher’s policies. This is the author created, accepted version manuscript following peer review and may differ slightly from the final published version. The final published version of this work is available at https://dx.doi.org/10.1103/PhysRevApplied.5.054011