Electro-photo-sensitive memristor for neuromorphic and arithmetic computing
Abstract
We present optically and electrically tunable conductance modifications of a site-controlled quantum-dot memristor. The conductance of the device is tuned by electron localization on a quantum dot. The control of the conductance with voltage and low-power light pulses enables applications in neuromorphic and arithmetic computing. As in neural networks, applying pre- and postsynaptic voltage pulses to the memristor allows us to increase (potentiation) or decrease (depression) the conductance by tuning the time difference between the electrical pulses. Exploiting state-dependent thresholds for potentiation and depression, we are able to demonstrate a memory-dependent induction of learning. The discharging of the quantum dot can further be induced by low-power light pulses in the nanowatt range. In combination with the state-dependent threshold voltage for discharging, this enables applications as generic building blocks to perform arithmetic operations in bases ranging from binary to decimal with low-power optical excitation. Our findings allow the realization of optoelectronic memristor-based synapses in artificial neural networks with a memory-dependent induction of learning and enhanced functionality by performing arithmetic operations.
Citation
Maier , P , Hartmann , F , Emmerling , M , Schneider , C , Kamp , M , Höfling , S & Worschech , L 2016 , ' Electro-photo-sensitive memristor for neuromorphic and arithmetic computing ' , Physical Review Applied , vol. 5 , no. 5 , 054011 , pp. 1-9 . https://doi.org/10.1103/PhysRevApplied.5.054011
Publication
Physical Review Applied
Status
Peer reviewed
ISSN
2331-7019Type
Journal article
Description
The authors gratefully acknowledge financial support from the European Union [FPVII (2007-2013) under Grant Agreement No. 318287 Landauer], as well as the state of Bavaria.Collections
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