Now showing items 1-8 of 8

  • Associative learning with Y-shaped floating gate transistors operated in memristive modes 

    Maier, P.; Hartmann, F.; Emmerling, M.; Schneider, C.; Kamp, M.; Worschech, L.; Höfling, S. (2017-02-03) - Journal article
    We present Y-shaped three-terminal floating gate transistors with positioned quantum dots (QDs) acting as floating gates. The QDs are precisely positioned in the input terminals and the localized charge controls the ...
  • Charging dynamics of a floating gate transistor with site-controlled quantum dots 

    Maier, P.; Hartmann, F.; Emmerling, M.; Schneider, C.; Höfling, S.; Kamp, M.; Worschech, L. (2014-08-04) - Journal article
    A quantum dot memory based on a GaAs/AlGaAs quantum wire with site-controlled InAs quantum dots was realized by means of molecular beam epitaxy and etching techniques. By sampling of different gate voltage sweeps for the ...
  • Electro-photo-sensitive memristor for neuromorphic and arithmetic computing 

    Maier, P.; Hartmann, F.; Emmerling, M.; Schneider, C.; Kamp, M.; Höfling, S.; Worschech, L. (2016-05-17) - Journal article
    We present optically and electrically tunable conductance modifications of a site-controlled quantum-dot memristor. The conductance of the device is tuned by electron localization on a quantum dot. The control of the ...
  • Gate-tunable, normally-on to normally-off memristance transition inpatterned LaAlO3/SrTiO3 interfaces 

    Maier, P.; Hartmann, F.; Gabel, J.; Frank, M.; Kuhn, S.; Scheiderer, P.; Leikert, B.; Sing, M.; Worschech, L.; Claessen, R.; Höfling, Sven (2017-03) - Journal article
    We report gate-tunable memristive switching in patterned LaAlO3/SrTiO3 interfaces at cryogenic temperatures. The application of voltages in the order of a few volts to the back gate of the device allows controlling and ...
  • Light sensitive memristor with bi-directional and wavelength-dependent conductance control 

    Maier, P.; Hartmann, F.; Rebello Sousa Dias, M.; Emmerling, M.; Schneider, C.; Castelano, L. K.; Kamp, M.; Marques, G. E.; Lopez-Richard, V.; Worschech, L.; Höfling, S. (2016-07-11) - Journal article
    We report the optical control of localized charge on positioned quantum dots in an electro-photo-sensitive memristor. Interband absorption processes in the quantum dot barrier matrix lead to photo-generated electron-hole-pairs ...
  • Memristive operation mode of a site-controlled quantum dot floating gate transistor 

    Maier, P.; Hartmann, F.; Mauder, T.; Emmerling, M.; Schneider, C.; Kamp, M.; Höfling, S.; Worschech, L. (2015-05-18) - Journal article
    We have realized a floating gate transistor based on a GaAs/AlGaAs heterostructure with site-controlled InAs quantum dots. By short-circuiting the source contact with the lateral gates and performing closed voltage sweep ...
  • Mimicking of pulse shape-dependent learning rules with a quantum dot memristor 

    Maier, P.; Hartmann, Fabian; Rebello Sousa Dias, M.; Emmerling, M.; Schneider, C.; Castelano, L. K.; Kamp, M.; Marques, G. E.; Lopez-Richard, V.; Worschech, L.; Höfling, Sven (2016-10-07) - Journal article
    We present the realization of four different learning rules with a quantum dot memristor by tuning the shape, the magnitude, the polarity and the timing of voltage pulses. The memristor displays a large maximum to minimum ...
  • Nanoscale tipping bucket effect in a quantum dot transistor-based counter 

    Hartmann, F.; Maier, P.; Rebello Sousa Dias, M.; Göpfert, S.; Castelano, L. K.; Emmerling, M.; Schneider, C.; Höfling, S.; Kamp, M.; Pershin, Y. V.; Marques, G. E.; Lopez-Richard, V.; Worschech, L. (2017-04-12) - Journal article
    Electronic circuits composed of one or more elements with inherent memory - memristors, memcapacitors and meminductors - offer lower circuit complexity and enhanced functionality for certain computational tasks. Networks ...