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Electro-photo-sensitive memristor for neuromorphic and arithmetic computing
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dc.contributor.author | Maier, P. | |
dc.contributor.author | Hartmann, F. | |
dc.contributor.author | Emmerling, M. | |
dc.contributor.author | Schneider, C. | |
dc.contributor.author | Kamp, M. | |
dc.contributor.author | Höfling, S. | |
dc.contributor.author | Worschech, L. | |
dc.date.accessioned | 2016-09-26T13:30:09Z | |
dc.date.available | 2016-09-26T13:30:09Z | |
dc.date.issued | 2016-05-17 | |
dc.identifier | 241962971 | |
dc.identifier | 3214abab-b423-40f1-8ed4-921a29d9ac79 | |
dc.identifier | 84973659480 | |
dc.identifier | 84973659480 | |
dc.identifier | 000376274800002 | |
dc.identifier.citation | Maier , P , Hartmann , F , Emmerling , M , Schneider , C , Kamp , M , Höfling , S & Worschech , L 2016 , ' Electro-photo-sensitive memristor for neuromorphic and arithmetic computing ' , Physical Review Applied , vol. 5 , no. 5 , 054011 , pp. 1-9 . https://doi.org/10.1103/PhysRevApplied.5.054011 | en |
dc.identifier.issn | 2331-7019 | |
dc.identifier.uri | https://hdl.handle.net/10023/9557 | |
dc.description | The authors gratefully acknowledge financial support from the European Union [FPVII (2007-2013) under Grant Agreement No. 318287 Landauer], as well as the state of Bavaria. | en |
dc.description.abstract | We present optically and electrically tunable conductance modifications of a site-controlled quantum-dot memristor. The conductance of the device is tuned by electron localization on a quantum dot. The control of the conductance with voltage and low-power light pulses enables applications in neuromorphic and arithmetic computing. As in neural networks, applying pre- and postsynaptic voltage pulses to the memristor allows us to increase (potentiation) or decrease (depression) the conductance by tuning the time difference between the electrical pulses. Exploiting state-dependent thresholds for potentiation and depression, we are able to demonstrate a memory-dependent induction of learning. The discharging of the quantum dot can further be induced by low-power light pulses in the nanowatt range. In combination with the state-dependent threshold voltage for discharging, this enables applications as generic building blocks to perform arithmetic operations in bases ranging from binary to decimal with low-power optical excitation. Our findings allow the realization of optoelectronic memristor-based synapses in artificial neural networks with a memory-dependent induction of learning and enhanced functionality by performing arithmetic operations. | |
dc.format.extent | 9 | |
dc.format.extent | 366926 | |
dc.language.iso | eng | |
dc.relation.ispartof | Physical Review Applied | en |
dc.subject | Memristor | en |
dc.subject | Artificial neural network | en |
dc.subject | Metaplasticity | en |
dc.subject | Synaptic plasticity | en |
dc.subject | Quantum dot | en |
dc.subject | Floating gate transistor | en |
dc.subject | QC Physics | en |
dc.subject | QA75 Electronic computers. Computer science | en |
dc.subject | Physics and Astronomy(all) | en |
dc.subject | NDAS | en |
dc.subject.lcc | QC | en |
dc.subject.lcc | QA75 | en |
dc.title | Electro-photo-sensitive memristor for neuromorphic and arithmetic computing | en |
dc.type | Journal article | en |
dc.contributor.institution | University of St Andrews. School of Physics and Astronomy | en |
dc.contributor.institution | University of St Andrews. Condensed Matter Physics | en |
dc.identifier.doi | https://doi.org/10.1103/PhysRevApplied.5.054011 | |
dc.description.status | Peer reviewed | en |
dc.identifier.url | http://www.scopus.com/inward/record.url?scp=84973659480&partnerID=8YFLogxK | en |
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