Light sensitive memristor with bi-directional and wavelength-dependent conductance control
Abstract
We report the optical control of localized charge on positioned quantum dots in an electro-photo-sensitive memristor. Interband absorption processes in the quantum dot barrier matrix lead to photo-generated electron-hole-pairs that, depending on the applied bias voltage, charge or discharge the quantum dots and hence decrease or increase the conductance. Wavelength-dependent conductance control is observed by illumination with red and infrared light, which leads to charging via interband and discharging via intraband absorption. The presented memristor enables optical conductance control and may thus be considered for sensory applications in artificial neural networks as light-sensitive synapses or optically tunable memories.
Citation
Maier , P , Hartmann , F , Rebello Sousa Dias , M , Emmerling , M , Schneider , C , Castelano , L K , Kamp , M , Marques , G E , Lopez-Richard , V , Worschech , L & Höfling , S 2016 , ' Light sensitive memristor with bi-directional and wavelength-dependent conductance control ' , Applied Physics Letters , vol. 109 , no. 2 , 023501 . https://doi.org/10.1063/1.4955464
Publication
Applied Physics Letters
Status
Peer reviewed
ISSN
0003-6951Type
Journal article
Description
The authors gratefully acknowledge financial support from the European Union (FPVII (2007-2013) under Grant Agreement No. 318287 Landauer) as well as the State of Bavaria. The Brazilian authors acknowledge the support from CNPq. V.L.-R. acknowledges the support from FAPESP (Grant Nos. 2014/02112-3 and 2015/10765-0).Collections
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