Light sensitive memristor with bi-directional and wavelength-dependent conductance control
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We report the optical control of localized charge on positioned quantum dots in an electro-photo-sensitive memristor. Interband absorption processes in the quantum dot barrier matrix lead to photo-generated electron-hole-pairs that, depending on the applied bias voltage, charge or discharge the quantum dots and hence decrease or increase the conductance. Wavelength-dependent conductance control is observed by illumination with red and infrared light, which leads to charging via interband and discharging via intraband absorption. The presented memristor enables optical conductance control and may thus be considered for sensory applications in artificial neural networks as light-sensitive synapses or optically tunable memories.
Maier , P , Hartmann , F , Rebello Sousa Dias , M , Emmerling , M , Schneider , C , Castelano , L K , Kamp , M , Marques , G E , Lopez-Richard , V , Worschech , L & Höfling , S 2016 , ' Light sensitive memristor with bi-directional and wavelength-dependent conductance control ' Applied Physics Letters , vol 109 , no. 2 , 023501 . DOI: 10.1063/1.4955464
Applied Physics Letters
© 2016, AIP Publishing. This work is made available online in accordance with the publisher’s policies. This is the author created, accepted version manuscript following peer review and may differ slightly from the final published version. The final published version of this work is available at scitaton.aip.org / http://dx.doi.org/10.1063/1.4955464
The authors gratefully acknowledge financial support from the European Union (FPVII (2007-2013) under Grant Agreement No. 318287 Landauer) as well as the State of Bavaria. The Brazilian authors acknowledge the support from CNPq. V.L.-R. acknowledges the support from FAPESP (Grant Nos. 2014/02112-3 and 2015/10765-0).
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