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dc.contributor.authorMaier, P.
dc.contributor.authorHartmann, F.
dc.contributor.authorRebello Sousa Dias, M.
dc.contributor.authorEmmerling, M.
dc.contributor.authorSchneider, C.
dc.contributor.authorCastelano, L. K.
dc.contributor.authorKamp, M.
dc.contributor.authorMarques, G. E.
dc.contributor.authorLopez-Richard, V.
dc.contributor.authorWorschech, L.
dc.contributor.authorHöfling, S.
dc.date.accessioned2016-08-08T11:30:03Z
dc.date.available2016-08-08T11:30:03Z
dc.date.issued2016-07-11
dc.identifier.citationMaier , P , Hartmann , F , Rebello Sousa Dias , M , Emmerling , M , Schneider , C , Castelano , L K , Kamp , M , Marques , G E , Lopez-Richard , V , Worschech , L & Höfling , S 2016 , ' Light sensitive memristor with bi-directional and wavelength-dependent conductance control ' , Applied Physics Letters , vol. 109 , no. 2 , 023501 . https://doi.org/10.1063/1.4955464en
dc.identifier.issn0003-6951
dc.identifier.otherPURE: 244740422
dc.identifier.otherPURE UUID: 83779dbc-e3ff-44b5-8197-98b84e5c9408
dc.identifier.otherBibtex: urn:af82adf2238f8d14b36733e2bf0575c4
dc.identifier.otherScopus: 84978419524
dc.identifier.otherWOS: 000381155200055
dc.identifier.urihttp://hdl.handle.net/10023/9273
dc.descriptionThe authors gratefully acknowledge financial support from the European Union (FPVII (2007-2013) under Grant Agreement No. 318287 Landauer) as well as the State of Bavaria. The Brazilian authors acknowledge the support from CNPq. V.L.-R. acknowledges the support from FAPESP (Grant Nos. 2014/02112-3 and 2015/10765-0).en
dc.description.abstractWe report the optical control of localized charge on positioned quantum dots in an electro-photo-sensitive memristor. Interband absorption processes in the quantum dot barrier matrix lead to photo-generated electron-hole-pairs that, depending on the applied bias voltage, charge or discharge the quantum dots and hence decrease or increase the conductance. Wavelength-dependent conductance control is observed by illumination with red and infrared light, which leads to charging via interband and discharging via intraband absorption. The presented memristor enables optical conductance control and may thus be considered for sensory applications in artificial neural networks as light-sensitive synapses or optically tunable memories.
dc.format.extent6
dc.language.isoeng
dc.relation.ispartofApplied Physics Lettersen
dc.rights© 2016, AIP Publishing. This work is made available online in accordance with the publisher’s policies. This is the author created, accepted version manuscript following peer review and may differ slightly from the final published version. The final published version of this work is available at scitaton.aip.org / http://dx.doi.org/10.1063/1.4955464en
dc.subjectQC Physicsen
dc.subjectT Technologyen
dc.subjectNDASen
dc.subject.lccQCen
dc.subject.lccTen
dc.titleLight sensitive memristor with bi-directional and wavelength-dependent conductance controlen
dc.typeJournal articleen
dc.description.versionPostprinten
dc.contributor.institutionUniversity of St Andrews.School of Physics and Astronomyen
dc.contributor.institutionUniversity of St Andrews.Condensed Matter Physicsen
dc.identifier.doihttps://doi.org/10.1063/1.4955464
dc.description.statusPeer revieweden


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