Show simple item record

Files in this item


Item metadata

dc.contributor.authorDugu, Sita
dc.contributor.authorPavunny, Shojan P.
dc.contributor.authorSharma, Yogesh
dc.contributor.authorScott, James F.
dc.contributor.authorKatiyar, Ram S.
dc.identifier.citationDugu , S , Pavunny , S P , Sharma , Y , Scott , J F & Katiyar , R S 2015 , ' Disorder driven structural and dielectric properties of silicon substituted strontium titanate ' , Journal of Applied Physics , vol. 118 , no. 3 , 034105 .
dc.identifier.otherBibtex: urn:fcf52b28973e4c19cfe34e807a907c23
dc.descriptionFinancial support from NSF Grant No. NSF-RII-0701525 was acknowledged. S.D. is thankful to DOD for doctoral fellowship under Grant No. W911NF-11-1-0204. S.P.P. is grateful to NSF for financial assistance under Grant No: NSF-EFRI RESTOR # 1038272.en
dc.description.abstractA systematic study on structural, microstructural, optical, dielectric, and electrical properties of phase-pure silicon-modified SrTiO3 polycrystalline electroceramics synthesized using high energy solid state reaction techniques is presented. The asymmetry and splitting in the x-ray diffractometer spectra and the observation of first order transverse optical TO2 and longitudinal optical LO4 modes in Raman spectra (nominally forbidden) revealed the distortion in the cubic lattice as a result of breaking of inversion symmetry due to doping. A bandgap Eg of 3.27 eV was determined for the sample by diffuse reflectance spectroscopy. A high dielectric constant of -400 and very low dielectric loss of -0.03 were obtained at 100 kHz near ambient conditions. The temperature dependence of the dielectric data displayed features of high temperature relaxor ferroelectric behavior as evidence of existence of polar nano-regions. The ac conductivity as a function of frequency showed features typical of universal dynamic response and obeyed a power law σac = σdc+Aωn . The temperature dependent dc conductivity followed an Arrhenius relation with activation energy of 123 meV in the 200–500 K temperature range. The linear dielectric response of Pt/SrSi0.03Ti0.97O3/Pt dielectric capacitors was well characterized. The measured leakage current was exceptionally low, 13 nA/cm2 at 8.7 kV/cm, revealing an interface blocked bulk conduction mechanism.
dc.relation.ispartofJournal of Applied Physicsen
dc.subjectQC Physicsen
dc.titleDisorder driven structural and dielectric properties of silicon substituted strontium titanateen
dc.typeJournal articleen
dc.contributor.institutionUniversity of St Andrews. School of Chemistryen
dc.contributor.institutionUniversity of St Andrews. School of Physics and Astronomyen
dc.description.statusPeer revieweden

This item appears in the following Collection(s)

Show simple item record