Submonolayer uniformity of type II InAs/GaInSb W-shaped quantum wells probed by full-wafer photoluminescence mapping in the mid-infrared spectral range
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The spatial uniformity of GaSb- and InAs substrate-based structures containing type II quantum wells was probed by means of large-scale photoluminescence (PL) mapping realized utilizing a Fourier transform infrared spectrometer. The active region was designed and grown in a form of a W-shaped structure with InAs and GaInSb layers for confinement of electrons and holes, respectively. The PL spectra were recorded over the entire 2-in. wafers, and the parameters extracted from each spectrum, such as PL peak energy position, its linewidth and integrated intensity, were collected in a form of two-dimensional spatial maps. Throughout the analysis of these maps, the wafers' homogeneity and precision of the growth procedure were investigated. A very small variation of PL peak energy over the wafer indicates InAs quantum well width fluctuation of only a fraction of a monolayer and hence extraordinary thickness accuracy, a conclusion further supported by high uniformity of both the emission intensity and PL linewidth.
Dyksik , M , Motyka , M , Sek , G , Misiewicz , J , Dallner , M , Weih , R , Kamp , M & Höfling , S 2015 , ' Submonolayer uniformity of type II InAs/GaInSb W-shaped quantum wells probed by full-wafer photoluminescence mapping in the mid-infrared spectral range ' Nanoscale research letters , vol. 10 , 402 , pp. 1-7 . DOI: 10.1186/s11671-015-1104-z
Nanoscale research letters
© 2015 Dyksik et al. Open Access. This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
DescriptionThe work has been supported by Project Widelase (No. 318798) of the 7-th Framework Program of the European Commission. Date of Acceptance: 06/10/2015
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