Now showing items 1-8 of 8

  • Innovative mid-infrared detector concepts 

    Höfling, Sven; Pfenning, Andreas; Weih, Robert; Ratajczak, Albert; Hartmann, Fabian; Knebl, Georg; Kamp, Martin; Worschech, Lukas (SPIE, 2016-09-14) - Conference item
    Gas sensing is a key technology with applications in various industrial, medical and environmental areas. Optical detection mechanisms allow for a highly selective, contactless and fast detection. For this purpose, ...
  • Interband cascade lasers with room temperature threshold current densities below 100 A/cm(2) 

    Weih, Robert; Kamp, Martin; Höfling, Sven (2013-06-10) - Journal article
    Interband Cascade Lasers (ICLs) with threshold current densities below 100 A/cm(2) in pulsed operation at room temperature are presented. The laser structure comprises 10 active stages of 41 nm length, each stage containing ...
  • Interface intermixing in type II InAs/GaInAsSb quantum wells designed for active regions of mid-infrared-emitting interband cascade lasers 

    Motyka, Marcin; SęK, Grzegorz; Ryczko, Krzysztof; Dyksik, Mateusz; Weih, Robert; Patriarche, Gilles; Misiewicz, Jan; Kamp, Martin; Höfling, Sven (2015-12-07) - Journal article
    The effect of interface intermixing in W-design GaSb/AlSb/InAs/Ga0.665 In0.335 AsxSb1 − x/InAs/AlSb/GaSb quantum wells (QWs) has been investigated by means of optical spectroscopy supported by structural data and by band ...
  • Laterally coupled DFB interband cascade laser with tapered ridge 

    Becker, Steffen; Scheuermann, Julian; Weih, Robert; Nähle, Lars; König, Oliver; Fischer, Marc; Köth, Johannes; Höfling, Sven; Kamp, Martin (2017-05-25) - Journal article
    In this work, single-mode distributed feedback interband cascade lasers with tapered ridges are presented. The lasers consists of a 500 μm long and 5.7 μm wide ridge wave guide section followed by a 1400 μm long tapered ...
  • Room temperature operation of GaSb-based resonant tunneling diodes by prewell injection 

    Pfenning, Andreas; Knebl, Georg; Hartmann, Fabian; Weih, Robert; Bader, Andreas; Emmerling, Monika; Kamp, Martin; Höfling, Sven; Worschech, Lukas (2017-01-20) - Journal article
    We present room temperature resonant tunneling of GaSb/AlAsSb double barrier resonant tunneling diodes with pseudomorphically grown prewell emitter structures comprising the ternary compound semiconductors GaInSb and GaAsSb. ...
  • Single mode interband cascade lasers based on lateral metal gratings 

    Weih, Robert; Naehle, Lars; Hoefling, Sven; Koeth, Johannes; Kamp, Martin (2014-08-18) - Journal article
    Single mode distributed feedback (DFB) interband cascade lasers were realized by placing metal gratings laterally to dry etched ridges. A discrete tuning range of 104 nm could be realized on the same gain material by a ...
  • Single-mode interband cascade lasers emitting below 2.8 μm 

    Scheuermann, Julian; Weih, Robert; von Edlinger, Michael; Naehle, Lars; Fischer, Marc; Koeth, Johannes; Kamp, Martin; Hoefling, Sven (2015-04-20) - Journal article
    In this work, single-mode distributed feedback (DFB) interband cascade laser (ICL) devices with record short wavelength emission below 2.8 μm are presented. Pulsed measurements based on broad area laser devices with a ...
  • Submonolayer uniformity of type II InAs/GaInSb W-shaped quantum wells probed by full-wafer photoluminescence mapping in the mid-infrared spectral range 

    Dyksik, Mateusz; Motyka, Marcin; Sek, Grzegorz; Misiewicz, Jan; Dallner, Matthias; Weih, Robert; Kamp, Martin; Höfling, Sven (2015-10-15) - Journal article
    The spatial uniformity of GaSb- and InAs substrate-based structures containing type II quantum wells was probed by means of large-scale photoluminescence (PL) mapping realized utilizing a Fourier transform infrared ...