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dc.contributor.authorDyksik, Mateusz
dc.contributor.authorMotyka, Marcin
dc.contributor.authorSek, Grzegorz
dc.contributor.authorMisiewicz, Jan
dc.contributor.authorDallner, Matthias
dc.contributor.authorWeih, Robert
dc.contributor.authorKamp, Martin
dc.contributor.authorHöfling, Sven
dc.identifier.citationDyksik , M , Motyka , M , Sek , G , Misiewicz , J , Dallner , M , Weih , R , Kamp , M & Höfling , S 2015 , ' Submonolayer uniformity of type II InAs/GaInSb W-shaped quantum wells probed by full-wafer photoluminescence mapping in the mid-infrared spectral range ' , Nanoscale research letters , vol. 10 , 402 , pp. 1-7 .
dc.descriptionThe work has been supported by Project Widelase (No. 318798) of the 7-th Framework Program of the European Commission. Date of Acceptance: 06/10/2015en
dc.description.abstractThe spatial uniformity of GaSb- and InAs substrate-based structures containing type II quantum wells was probed by means of large-scale photoluminescence (PL) mapping realized utilizing a Fourier transform infrared spectrometer. The active region was designed and grown in a form of a W-shaped structure with InAs and GaInSb layers for confinement of electrons and holes, respectively. The PL spectra were recorded over the entire 2-in. wafers, and the parameters extracted from each spectrum, such as PL peak energy position, its linewidth and integrated intensity, were collected in a form of two-dimensional spatial maps. Throughout the analysis of these maps, the wafers' homogeneity and precision of the growth procedure were investigated. A very small variation of PL peak energy over the wafer indicates InAs quantum well width fluctuation of only a fraction of a monolayer and hence extraordinary thickness accuracy, a conclusion further supported by high uniformity of both the emission intensity and PL linewidth.
dc.relation.ispartofNanoscale research lettersen
dc.subjectSpatially resolved photoluminescenceen
dc.subjectType II quantum wellsen
dc.subjectFourier transform spectroscopyen
dc.subjectInterband cascade lasersen
dc.subjectQC Physicsen
dc.titleSubmonolayer uniformity of type II InAs/GaInSb W-shaped quantum wells probed by full-wafer photoluminescence mapping in the mid-infrared spectral rangeen
dc.typeJournal articleen
dc.contributor.institutionUniversity of St Andrews. School of Physics and Astronomyen
dc.contributor.institutionUniversity of St Andrews. Condensed Matter Physicsen
dc.description.statusPeer revieweden

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