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Submonolayer uniformity of type II InAs/GaInSb W-shaped quantum wells probed by full-wafer photoluminescence mapping in the mid-infrared spectral range
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dc.contributor.author | Dyksik, Mateusz | |
dc.contributor.author | Motyka, Marcin | |
dc.contributor.author | Sek, Grzegorz | |
dc.contributor.author | Misiewicz, Jan | |
dc.contributor.author | Dallner, Matthias | |
dc.contributor.author | Weih, Robert | |
dc.contributor.author | Kamp, Martin | |
dc.contributor.author | Höfling, Sven | |
dc.date.accessioned | 2015-11-05T12:40:02Z | |
dc.date.available | 2015-11-05T12:40:02Z | |
dc.date.issued | 2015-10-15 | |
dc.identifier | 228674857 | |
dc.identifier | 1a53621f-d221-4ecb-a182-2a2c6a383577 | |
dc.identifier | 000362971700001 | |
dc.identifier | 84944460647 | |
dc.identifier | 000362971700001 | |
dc.identifier.citation | Dyksik , M , Motyka , M , Sek , G , Misiewicz , J , Dallner , M , Weih , R , Kamp , M & Höfling , S 2015 , ' Submonolayer uniformity of type II InAs/GaInSb W-shaped quantum wells probed by full-wafer photoluminescence mapping in the mid-infrared spectral range ' , Nanoscale research letters , vol. 10 , 402 , pp. 1-7 . https://doi.org/10.1186/s11671-015-1104-z | en |
dc.identifier.issn | 1556-276X | |
dc.identifier.uri | https://hdl.handle.net/10023/7742 | |
dc.description | The work has been supported by Project Widelase (No. 318798) of the 7-th Framework Program of the European Commission. Date of Acceptance: 06/10/2015 | en |
dc.description.abstract | The spatial uniformity of GaSb- and InAs substrate-based structures containing type II quantum wells was probed by means of large-scale photoluminescence (PL) mapping realized utilizing a Fourier transform infrared spectrometer. The active region was designed and grown in a form of a W-shaped structure with InAs and GaInSb layers for confinement of electrons and holes, respectively. The PL spectra were recorded over the entire 2-in. wafers, and the parameters extracted from each spectrum, such as PL peak energy position, its linewidth and integrated intensity, were collected in a form of two-dimensional spatial maps. Throughout the analysis of these maps, the wafers' homogeneity and precision of the growth procedure were investigated. A very small variation of PL peak energy over the wafer indicates InAs quantum well width fluctuation of only a fraction of a monolayer and hence extraordinary thickness accuracy, a conclusion further supported by high uniformity of both the emission intensity and PL linewidth. | |
dc.format.extent | 7 | |
dc.format.extent | 912741 | |
dc.language.iso | eng | |
dc.relation.ispartof | Nanoscale research letters | en |
dc.subject | Spatially resolved photoluminescence | en |
dc.subject | Type II quantum wells | en |
dc.subject | Mid-infrared | en |
dc.subject | Fourier transform spectroscopy | en |
dc.subject | Interband cascade lasers | en |
dc.subject | QC Physics | en |
dc.subject | NDAS | en |
dc.subject.lcc | QC | en |
dc.title | Submonolayer uniformity of type II InAs/GaInSb W-shaped quantum wells probed by full-wafer photoluminescence mapping in the mid-infrared spectral range | en |
dc.type | Journal article | en |
dc.contributor.institution | University of St Andrews. School of Physics and Astronomy | en |
dc.contributor.institution | University of St Andrews. Condensed Matter Physics | en |
dc.identifier.doi | 10.1186/s11671-015-1104-z | |
dc.description.status | Peer reviewed | en |
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