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dc.contributor.authorDyksik, Mateusz
dc.contributor.authorMotyka, Marcin
dc.contributor.authorSek, Grzegorz
dc.contributor.authorMisiewicz, Jan
dc.contributor.authorDallner, Matthias
dc.contributor.authorWeih, Robert
dc.contributor.authorKamp, Martin
dc.contributor.authorHöfling, Sven
dc.date.accessioned2015-11-05T12:40:02Z
dc.date.available2015-11-05T12:40:02Z
dc.date.issued2015-10-15
dc.identifier228674857
dc.identifier1a53621f-d221-4ecb-a182-2a2c6a383577
dc.identifier000362971700001
dc.identifier84944460647
dc.identifier000362971700001
dc.identifier.citationDyksik , M , Motyka , M , Sek , G , Misiewicz , J , Dallner , M , Weih , R , Kamp , M & Höfling , S 2015 , ' Submonolayer uniformity of type II InAs/GaInSb W-shaped quantum wells probed by full-wafer photoluminescence mapping in the mid-infrared spectral range ' , Nanoscale research letters , vol. 10 , 402 , pp. 1-7 . https://doi.org/10.1186/s11671-015-1104-zen
dc.identifier.issn1556-276X
dc.identifier.urihttps://hdl.handle.net/10023/7742
dc.descriptionThe work has been supported by Project Widelase (No. 318798) of the 7-th Framework Program of the European Commission. Date of Acceptance: 06/10/2015en
dc.description.abstractThe spatial uniformity of GaSb- and InAs substrate-based structures containing type II quantum wells was probed by means of large-scale photoluminescence (PL) mapping realized utilizing a Fourier transform infrared spectrometer. The active region was designed and grown in a form of a W-shaped structure with InAs and GaInSb layers for confinement of electrons and holes, respectively. The PL spectra were recorded over the entire 2-in. wafers, and the parameters extracted from each spectrum, such as PL peak energy position, its linewidth and integrated intensity, were collected in a form of two-dimensional spatial maps. Throughout the analysis of these maps, the wafers' homogeneity and precision of the growth procedure were investigated. A very small variation of PL peak energy over the wafer indicates InAs quantum well width fluctuation of only a fraction of a monolayer and hence extraordinary thickness accuracy, a conclusion further supported by high uniformity of both the emission intensity and PL linewidth.
dc.format.extent7
dc.format.extent912741
dc.language.isoeng
dc.relation.ispartofNanoscale research lettersen
dc.subjectSpatially resolved photoluminescenceen
dc.subjectType II quantum wellsen
dc.subjectMid-infrareden
dc.subjectFourier transform spectroscopyen
dc.subjectInterband cascade lasersen
dc.subjectQC Physicsen
dc.subjectNDASen
dc.subject.lccQCen
dc.titleSubmonolayer uniformity of type II InAs/GaInSb W-shaped quantum wells probed by full-wafer photoluminescence mapping in the mid-infrared spectral rangeen
dc.typeJournal articleen
dc.contributor.institutionUniversity of St Andrews. School of Physics and Astronomyen
dc.contributor.institutionUniversity of St Andrews. Condensed Matter Physicsen
dc.identifier.doi10.1186/s11671-015-1104-z
dc.description.statusPeer revieweden


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