Memristive operation mode of a site-controlled quantum dot floating gate transistor
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We have realized a floating gate transistor based on a GaAs/AlGaAs heterostructure with site-controlled InAs quantum dots. By short-circuiting the source contact with the lateral gates and performing closed voltage sweep cycles, we observe a memristive operation mode with pinched hysteresis loops and two clearly distinguishable conductive states. The conductance depends on the quantum dot charge which can be altered in a controllable manner by the voltage value and time interval spent in the charging region. The quantum dot memristor has the potential to realize artificial synapses in a state-of-the-art opto-electronic semiconductor platform by charge localization and Coulomb coupling.
Maier , P , Hartmann , F , Mauder , T , Emmerling , M , Schneider , C , Kamp , M , Höfling , S & Worschech , L 2015 , ' Memristive operation mode of a site-controlled quantum dot floating gate transistor ' Applied Physics Letters , vol 106 , no. 20 , 203501 . DOI: 10.1063/1.4921061
Applied Physics Letters
Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in: Maier, P., Hartmann, F., Mauder, T., Emmerling, M., Schneider, C., Kamp, M., Höfling, S., & Worschech, L. (2015). Memristive operation mode of a site-controlled quantum dot floating gate transistor. Applied Physics Letters, 106(20), , and may be found at http://dx.doi.org/10.1063/1.4921061.
The authors gratefully acknowledge financial support from the European Union (FPVII (2007-2013) under Grant Agreement No. 318287 Landauer) as well as the state of Bavaria.
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