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Memristive operation mode of a site-controlled quantum dot floating gate transistor
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dc.contributor.author | Maier, P. | |
dc.contributor.author | Hartmann, F. | |
dc.contributor.author | Mauder, T. | |
dc.contributor.author | Emmerling, M. | |
dc.contributor.author | Schneider, C. | |
dc.contributor.author | Kamp, M. | |
dc.contributor.author | Höfling, S. | |
dc.contributor.author | Worschech, L. | |
dc.date.accessioned | 2015-06-12T16:10:02Z | |
dc.date.available | 2015-06-12T16:10:02Z | |
dc.date.issued | 2015-05-18 | |
dc.identifier | 194891019 | |
dc.identifier | 0a6c983c-b3a6-4035-a227-bb05b295dc1f | |
dc.identifier | 84929630004 | |
dc.identifier | 000355009400045 | |
dc.identifier.citation | Maier , P , Hartmann , F , Mauder , T , Emmerling , M , Schneider , C , Kamp , M , Höfling , S & Worschech , L 2015 , ' Memristive operation mode of a site-controlled quantum dot floating gate transistor ' , Applied Physics Letters , vol. 106 , no. 20 , 203501 . https://doi.org/10.1063/1.4921061 | en |
dc.identifier.issn | 0003-6951 | |
dc.identifier.uri | https://hdl.handle.net/10023/6821 | |
dc.description | The authors gratefully acknowledge financial support from the European Union (FPVII (2007-2013) under Grant Agreement No. 318287 Landauer) as well as the state of Bavaria. | en |
dc.description.abstract | We have realized a floating gate transistor based on a GaAs/AlGaAs heterostructure with site-controlled InAs quantum dots. By short-circuiting the source contact with the lateral gates and performing closed voltage sweep cycles, we observe a memristive operation mode with pinched hysteresis loops and two clearly distinguishable conductive states. The conductance depends on the quantum dot charge which can be altered in a controllable manner by the voltage value and time interval spent in the charging region. The quantum dot memristor has the potential to realize artificial synapses in a state-of-the-art opto-electronic semiconductor platform by charge localization and Coulomb coupling. | |
dc.format.extent | 1281214 | |
dc.language.iso | eng | |
dc.relation.ispartof | Applied Physics Letters | en |
dc.subject | QC Physics | en |
dc.subject | NDAS | en |
dc.subject.lcc | QC | en |
dc.title | Memristive operation mode of a site-controlled quantum dot floating gate transistor | en |
dc.type | Journal article | en |
dc.contributor.institution | University of St Andrews. School of Physics and Astronomy | en |
dc.contributor.institution | University of St Andrews. Condensed Matter Physics | en |
dc.identifier.doi | 10.1063/1.4921061 | |
dc.description.status | Peer reviewed | en |
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