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dc.contributor.authorMaier, P.
dc.contributor.authorHartmann, F.
dc.contributor.authorMauder, T.
dc.contributor.authorEmmerling, M.
dc.contributor.authorSchneider, C.
dc.contributor.authorKamp, M.
dc.contributor.authorHöfling, S.
dc.contributor.authorWorschech, L.
dc.date.accessioned2015-06-12T16:10:02Z
dc.date.available2015-06-12T16:10:02Z
dc.date.issued2015-05-18
dc.identifier.citationMaier , P , Hartmann , F , Mauder , T , Emmerling , M , Schneider , C , Kamp , M , Höfling , S & Worschech , L 2015 , ' Memristive operation mode of a site-controlled quantum dot floating gate transistor ' , Applied Physics Letters , vol. 106 , no. 20 , 203501 . https://doi.org/10.1063/1.4921061en
dc.identifier.issn0003-6951
dc.identifier.otherPURE: 194891019
dc.identifier.otherPURE UUID: 0a6c983c-b3a6-4035-a227-bb05b295dc1f
dc.identifier.otherScopus: 84929630004
dc.identifier.otherWOS: 000355009400045
dc.identifier.urihttps://hdl.handle.net/10023/6821
dc.descriptionThe authors gratefully acknowledge financial support from the European Union (FPVII (2007-2013) under Grant Agreement No. 318287 Landauer) as well as the state of Bavaria.en
dc.description.abstractWe have realized a floating gate transistor based on a GaAs/AlGaAs heterostructure with site-controlled InAs quantum dots. By short-circuiting the source contact with the lateral gates and performing closed voltage sweep cycles, we observe a memristive operation mode with pinched hysteresis loops and two clearly distinguishable conductive states. The conductance depends on the quantum dot charge which can be altered in a controllable manner by the voltage value and time interval spent in the charging region. The quantum dot memristor has the potential to realize artificial synapses in a state-of-the-art opto-electronic semiconductor platform by charge localization and Coulomb coupling.
dc.language.isoeng
dc.relation.ispartofApplied Physics Lettersen
dc.rightsCopyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in: Maier, P., Hartmann, F., Mauder, T., Emmerling, M., Schneider, C., Kamp, M., Höfling, S., & Worschech, L. (2015). Memristive operation mode of a site-controlled quantum dot floating gate transistor. Applied Physics Letters, 106(20), [203501], and may be found at http://dx.doi.org/10.1063/1.4921061.en
dc.subjectQC Physicsen
dc.subjectNDASen
dc.subject.lccQCen
dc.titleMemristive operation mode of a site-controlled quantum dot floating gate transistoren
dc.typeJournal articleen
dc.description.versionPublisher PDFen
dc.contributor.institutionUniversity of St Andrews. School of Physics and Astronomyen
dc.contributor.institutionUniversity of St Andrews. Condensed Matter Physicsen
dc.identifier.doihttps://doi.org/10.1063/1.4921061
dc.description.statusPeer revieweden


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