Quantum oscillations and high carrier mobility in the delafossite PdCoO2

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1207.5402v1 (657.7Kb)
Date
09/2012
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EP/I031014/1
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Abstract
We present de Haas-van Alphen and resistivity data on single crystals of the delafossite PdCoO2. At 295 K we measure an in-plane resistivity of 2.6 μΩcm, making PdCoO2 the most conductive oxide known. The low-temperature in-plane resistivity has an activated rather than the usual T5 temperature dependence, suggesting a gapping of effective scattering that is consistent with phonon drag. Below 10 K, the transport mean free path is ∼20 μm, approximately 105 lattice spacings and an astoundingly high value for flux-grown crystals. We discuss the origin of these properties in light of our data.
Citation
Hicks , C W , Gibbs , A S , Mackenzie , A , Takatsu , H , Maeno , Y & Yelland , E A 2012 , ' Quantum oscillations and high carrier mobility in the delafossite PdCoO 2 ' , Physical Review Letters , vol. 109 , no. 11 , 116401 . https://doi.org/10.1103/PhysRevLett.109.116401
Publication
Physical Review Letters
Status
Peer reviewed
DOI
https://doi.org/10.1103/PhysRevLett.109.116401
ISSN
0031-9007
Type
Journal article
Rights
This is an author version of this work. The published version (c) 2012 American Physical Society is available from http://link.aps.org/doi/10.1103/PhysRevLett.109.116401
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URL
http://arxiv.org/abs/1207.5402
URI
http://hdl.handle.net/10023/3246

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