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dc.contributor.authorHicks, Clifford William
dc.contributor.authorGibbs, Alexandra Sarah
dc.contributor.authorMackenzie, Andrew
dc.contributor.authorTakatsu, Hiroshi
dc.contributor.authorMaeno, Yoshiteru
dc.contributor.authorYelland, Edward Alexander
dc.identifier.citationHicks , C W , Gibbs , A S , Mackenzie , A , Takatsu , H , Maeno , Y & Yelland , E A 2012 , ' Quantum oscillations and high carrier mobility in the delafossite PdCoO 2 ' , Physical Review Letters , vol. 109 , no. 11 , 116401 .
dc.identifier.otherPURE: 25114563
dc.identifier.otherPURE UUID: 732426df-d461-475b-b6f6-b7e6927325a6
dc.identifier.otherScopus: 84866084322
dc.identifier.otherWOS: 000308527300010
dc.identifier.otherORCID: /0000-0002-7012-1831/work/78527991
dc.description.abstractWe present de Haas-van Alphen and resistivity data on single crystals of the delafossite PdCoO2. At 295 K we measure an in-plane resistivity of 2.6 μΩcm, making PdCoO2 the most conductive oxide known. The low-temperature in-plane resistivity has an activated rather than the usual T5 temperature dependence, suggesting a gapping of effective scattering that is consistent with phonon drag. Below 10 K, the transport mean free path is ∼20 μm, approximately 105 lattice spacings and an astoundingly high value for flux-grown crystals. We discuss the origin of these properties in light of our data.
dc.relation.ispartofPhysical Review Lettersen
dc.rightsThis is an author version of this work. The published version (c) 2012 American Physical Society is available from
dc.subjectQC Physicsen
dc.titleQuantum oscillations and high carrier mobility in the delafossite PdCoO2en
dc.typeJournal articleen
dc.contributor.institutionUniversity of St Andrews.School of Physics and Astronomyen
dc.contributor.institutionUniversity of St Andrews.Condensed Matter Physicsen
dc.description.statusPeer revieweden

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