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p-type doped AlAsSb/GaSb resonant tunneling diode photodetector for the mid-infrared spectral region

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Pfenning_2018_p_type_doped_AOM_AAM.pdf (1.355Mb)
Date
23/10/2018
Author
Pfenning, Andreas
Hartmann, Fabian
Weih, Robert
Emmerling, Monika
Worschech, Lukas
Höfling, Sven
Keywords
Resonant tunneling
GaSb
Mid-infrared
Photodetection
Holes
QC Physics
TK Electrical engineering. Electronics Nuclear engineering
NDAS
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Abstract
Mid‐infrared (MIR) resonant tunneling diode (RTD) photodetectors based on a p‐type doped AlAsSb/GaSb double‐barrier quantum well (DBQW) are proposed and investigated for their optoelectronic transport properties. At room temperature, a distinct resonant tunneling current with a region of negative differential conductance is measured. The peak‐to‐valley current ratio (PVCR) is 1.51. To provide photosensitivity within the MIR spectral region, a lattice‐matched quaternary low‐bandgap GaInAsSb absorption layer with cutoff wavelength of λ = 2.77 μm is integrated near the DBQW. Under illumination with infrared light, photogenerated minority electrons within the absorption layer can drift toward the DBQW, where they accumulate and cause a shift of the current–voltage characteristics toward smaller bias voltages, which can be exploited to measure the incident MIR light power. In a tunable diode laser absorption spectroscopy experiment, the RTD photodetector is used to identify three distinct water absorption lines in the MIR close to λ = 2.61 μm. By adjusting the absorption layer doping concentration, the RTD quantum efficiency can be increased by a factor of 10, resulting in a sensitivity of S = 2.71 A W−1, which corresponds to an estimated multiplication factor of M = 8.6.
Citation
Pfenning , A , Hartmann , F , Weih , R , Emmerling , M , Worschech , L & Höfling , S 2018 , ' p-type doped AlAsSb/GaSb resonant tunneling diode photodetector for the mid-infrared spectral region ' , Advanced Optical Materials , vol. Early View , 1800972 . https://doi.org/10.1002/adom.201800972
Publication
Advanced Optical Materials
Status
Peer reviewed
DOI
https://doi.org/10.1002/adom.201800972
ISSN
2195-1071
Type
Journal article
Rights
Copyright © 2018 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim. This work has been made available online in accordance with the publisher’s policies. This is the author created, accepted version manuscript following peer review and may differ slightly from the final published version. The final published version of this work is available at: https://doi.org/10.1002/adom.201800972
Description
The authors are grateful for financial support from the State of Bavaria, the German Ministry of Education and Research (BMBF) via the national project HIRT (Grant No. FKZ 13XP5003B).
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  • University of St Andrews Research
URI
http://hdl.handle.net/10023/18748

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