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p-type doped AlAsSb/GaSb resonant tunneling diode photodetector for the mid-infrared spectral region
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dc.contributor.author | Pfenning, Andreas | |
dc.contributor.author | Hartmann, Fabian | |
dc.contributor.author | Weih, Robert | |
dc.contributor.author | Emmerling, Monika | |
dc.contributor.author | Worschech, Lukas | |
dc.contributor.author | Höfling, Sven | |
dc.date.accessioned | 2019-10-22T23:36:49Z | |
dc.date.available | 2019-10-22T23:36:49Z | |
dc.date.issued | 2018-10-23 | |
dc.identifier | 256155300 | |
dc.identifier | c13b422d-1b10-463e-9137-17be0141844b | |
dc.identifier | 85055561342 | |
dc.identifier | 000453480900012 | |
dc.identifier.citation | Pfenning , A , Hartmann , F , Weih , R , Emmerling , M , Worschech , L & Höfling , S 2018 , ' p-type doped AlAsSb/GaSb resonant tunneling diode photodetector for the mid-infrared spectral region ' , Advanced Optical Materials , vol. Early View , 1800972 . https://doi.org/10.1002/adom.201800972 | en |
dc.identifier.issn | 2195-1071 | |
dc.identifier.uri | https://hdl.handle.net/10023/18748 | |
dc.description | The authors are grateful for financial support from the State of Bavaria, the German Ministry of Education and Research (BMBF) via the national project HIRT (Grant No. FKZ 13XP5003B). | en |
dc.description.abstract | Mid‐infrared (MIR) resonant tunneling diode (RTD) photodetectors based on a p‐type doped AlAsSb/GaSb double‐barrier quantum well (DBQW) are proposed and investigated for their optoelectronic transport properties. At room temperature, a distinct resonant tunneling current with a region of negative differential conductance is measured. The peak‐to‐valley current ratio (PVCR) is 1.51. To provide photosensitivity within the MIR spectral region, a lattice‐matched quaternary low‐bandgap GaInAsSb absorption layer with cutoff wavelength of λ = 2.77 μm is integrated near the DBQW. Under illumination with infrared light, photogenerated minority electrons within the absorption layer can drift toward the DBQW, where they accumulate and cause a shift of the current–voltage characteristics toward smaller bias voltages, which can be exploited to measure the incident MIR light power. In a tunable diode laser absorption spectroscopy experiment, the RTD photodetector is used to identify three distinct water absorption lines in the MIR close to λ = 2.61 μm. By adjusting the absorption layer doping concentration, the RTD quantum efficiency can be increased by a factor of 10, resulting in a sensitivity of S = 2.71 A W−1, which corresponds to an estimated multiplication factor of M = 8.6. | |
dc.format.extent | 1421270 | |
dc.language.iso | eng | |
dc.relation.ispartof | Advanced Optical Materials | en |
dc.subject | Resonant tunneling | en |
dc.subject | GaSb | en |
dc.subject | Mid-infrared | en |
dc.subject | Photodetection | en |
dc.subject | Holes | en |
dc.subject | QC Physics | en |
dc.subject | TK Electrical engineering. Electronics Nuclear engineering | en |
dc.subject | NDAS | en |
dc.subject.lcc | QC | en |
dc.subject.lcc | TK | en |
dc.title | p-type doped AlAsSb/GaSb resonant tunneling diode photodetector for the mid-infrared spectral region | en |
dc.type | Journal article | en |
dc.contributor.institution | University of St Andrews. Condensed Matter Physics | en |
dc.contributor.institution | University of St Andrews. School of Physics and Astronomy | en |
dc.identifier.doi | 10.1002/adom.201800972 | |
dc.description.status | Peer reviewed | en |
dc.date.embargoedUntil | 2019-10-23 |
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