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dc.contributor.authorPfenning, Andreas
dc.contributor.authorHartmann, Fabian
dc.contributor.authorWeih, Robert
dc.contributor.authorEmmerling, Monika
dc.contributor.authorWorschech, Lukas
dc.contributor.authorHöfling, Sven
dc.identifier.citationPfenning , A , Hartmann , F , Weih , R , Emmerling , M , Worschech , L & Höfling , S 2018 , ' p-type doped AlAsSb/GaSb resonant tunneling diode photodetector for the mid-infrared spectral region ' , Advanced Optical Materials , vol. Early View , 1800972 .
dc.identifier.otherPURE: 256155300
dc.identifier.otherPURE UUID: c13b422d-1b10-463e-9137-17be0141844b
dc.identifier.otherScopus: 85055561342
dc.identifier.otherWOS: 000453480900012
dc.descriptionThe authors are grateful for financial support from the State of Bavaria, the German Ministry of Education and Research (BMBF) via the national project HIRT (Grant No. FKZ 13XP5003B).en
dc.description.abstractMid‐infrared (MIR) resonant tunneling diode (RTD) photodetectors based on a p‐type doped AlAsSb/GaSb double‐barrier quantum well (DBQW) are proposed and investigated for their optoelectronic transport properties. At room temperature, a distinct resonant tunneling current with a region of negative differential conductance is measured. The peak‐to‐valley current ratio (PVCR) is 1.51. To provide photosensitivity within the MIR spectral region, a lattice‐matched quaternary low‐bandgap GaInAsSb absorption layer with cutoff wavelength of λ = 2.77 μm is integrated near the DBQW. Under illumination with infrared light, photogenerated minority electrons within the absorption layer can drift toward the DBQW, where they accumulate and cause a shift of the current–voltage characteristics toward smaller bias voltages, which can be exploited to measure the incident MIR light power. In a tunable diode laser absorption spectroscopy experiment, the RTD photodetector is used to identify three distinct water absorption lines in the MIR close to λ = 2.61 μm. By adjusting the absorption layer doping concentration, the RTD quantum efficiency can be increased by a factor of 10, resulting in a sensitivity of S = 2.71 A W−1, which corresponds to an estimated multiplication factor of M = 8.6.
dc.relation.ispartofAdvanced Optical Materialsen
dc.rightsCopyright © 2018 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim. This work has been made available online in accordance with the publisher’s policies. This is the author created, accepted version manuscript following peer review and may differ slightly from the final published version. The final published version of this work is available at:
dc.subjectResonant tunnelingen
dc.subjectQC Physicsen
dc.subjectTK Electrical engineering. Electronics Nuclear engineeringen
dc.titlep-type doped AlAsSb/GaSb resonant tunneling diode photodetector for the mid-infrared spectral regionen
dc.typeJournal articleen
dc.contributor.institutionUniversity of St Andrews. Condensed Matter Physicsen
dc.contributor.institutionUniversity of St Andrews. School of Physics and Astronomyen
dc.description.statusPeer revieweden

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