GaSb/AlAsSb resonant tunneling diodes with GaAsSb emitter prewells
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We investigate the electronic transport properties of GaSb/AlAsSb double barrier resonant tunneling diodes with pseudomorphically grown ternary GaAsxSb1-x emitter prewells over a broad temperature range. At room temperature, resonant tunneling is observed and the peak to valley current ratio (PVCR) is enhanced with increasing As mole fraction from 1.88 (GaAs0.07Sb0.93 prewell), to 2.08 (GaAs0.09Sb0.91 prewell) up to 2.36 (GaAs0.11Sb0.89 prewell). The rise in PVCR is attributed to an enhanced carrier density at the Γ-valley within the emitter prewell. On the contrary at cryogenic temperatures, increasing the As mole fractions reduces the PVCR. At a temperature of T = 4.2 K, reference samples without incorporation of an emitter prewell containing As show PVCRs up to 20.4. We attribute the reduced PVCR to a degraded crystal quality of the resonant tunneling structure caused by As incorporation and subsequently an enhanced defect scattering at the interfaces.
Pfenning , A , Knebl , G , Hartmann , F , Weih , R , Meyer , M , Bader , A , Emmerling , M , Worschech , L & Höfling , S 2017 , ' GaSb/AlAsSb resonant tunneling diodes with GaAsSb emitter prewells ' Applied Physics Letters , vol 111 , 171104 . DOI: 10.1063/1.4997497
Applied Physics Letters
© 2017 The Authors. Published by AIP Publishing. This work has been made available online in accordance with the publisher’s policies. This is the author created, accepted version manuscript following peer review and may differ slightly from the final published version. The final published version of this work is available at https://doi.org/10.1063/1.4997497
DescriptionThe authors are grateful for financial support by the state of Bavaria, and the German Ministry of Education and Research (BMBF) within the national project HIRT (FKZ 13XP5003B).
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