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dc.contributor.authorPfenning, Andreas
dc.contributor.authorKnebl, Georg
dc.contributor.authorHartmann, Fabian
dc.contributor.authorWeih, Robert
dc.contributor.authorMeyer, Manuel
dc.contributor.authorBader, Andreas
dc.contributor.authorEmmerling, Monika
dc.contributor.authorWorschech, Lukas
dc.contributor.authorHöfling, Sven
dc.identifier.citationPfenning , A , Knebl , G , Hartmann , F , Weih , R , Meyer , M , Bader , A , Emmerling , M , Worschech , L & Höfling , S 2017 , ' GaSb/AlAsSb resonant tunneling diodes with GaAsSb emitter prewells ' , Applied Physics Letters , vol. 111 , 171104 .
dc.descriptionThe authors are grateful for financial support by the state of Bavaria, and the German Ministry of Education and Research (BMBF) within the national project HIRT (FKZ 13XP5003B).en
dc.description.abstractWe investigate the electronic transport properties of GaSb/AlAsSb double barrier resonant tunneling diodes with pseudomorphically grown ternary GaAsxSb1-x emitter prewells over a broad temperature range. At room temperature, resonant tunneling is observed and the peak to valley current ratio (PVCR) is enhanced with increasing As mole fraction from 1.88 (GaAs0.07Sb0.93 prewell), to 2.08 (GaAs0.09Sb0.91 prewell) up to 2.36 (GaAs0.11Sb0.89 prewell). The rise in PVCR is attributed to an enhanced carrier density at the Γ-valley within the emitter prewell. On the contrary at cryogenic temperatures, increasing the As mole fractions reduces the PVCR. At a temperature of T = 4.2 K, reference samples without incorporation of an emitter prewell containing As show PVCRs up to 20.4. We attribute the reduced PVCR to a degraded crystal quality of the resonant tunneling structure caused by As incorporation and subsequently an enhanced defect scattering at the interfaces.
dc.relation.ispartofApplied Physics Lettersen
dc.subjectQC Physicsen
dc.titleGaSb/AlAsSb resonant tunneling diodes with GaAsSb emitter prewellsen
dc.typeJournal articleen
dc.contributor.institutionUniversity of St Andrews. School of Physics and Astronomyen
dc.contributor.institutionUniversity of St Andrews. Condensed Matter Physicsen
dc.description.statusPeer revieweden

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