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Room temperature carrier kinetics in the W-type GaInAsSb/InAs/AlSb quantum well structure emitting in mid-infrared spectral range
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dc.contributor.author | Syperek, M. | |
dc.contributor.author | Ryczko, K. | |
dc.contributor.author | Dallner, M. | |
dc.contributor.author | Dyksik, M. | |
dc.contributor.author | Motyka, M. | |
dc.contributor.author | Kamp, M. | |
dc.contributor.author | Höfling, S. | |
dc.contributor.author | Misiewicz, J. | |
dc.contributor.author | Sȩk, G. | |
dc.contributor.editor | Sawicki, Maciej | |
dc.contributor.editor | Witkowski, Bartłomiej S. | |
dc.date.accessioned | 2016-12-21T12:30:12Z | |
dc.date.available | 2016-12-21T12:30:12Z | |
dc.date.issued | 2016-11-01 | |
dc.identifier | 248203489 | |
dc.identifier | 9f4da85a-1b03-4797-adb6-cebbe1874485 | |
dc.identifier | 84999040116 | |
dc.identifier | 000389065300019 | |
dc.identifier.citation | Syperek , M , Ryczko , K , Dallner , M , Dyksik , M , Motyka , M , Kamp , M , Höfling , S , Misiewicz , J & Sȩk , G 2016 , Room temperature carrier kinetics in the W-type GaInAsSb/InAs/AlSb quantum well structure emitting in mid-infrared spectral range . in M Sawicki & B S Witkowski (eds) , Acta Physica Polonica A : Proceedings of the 45th International School and Conference on the Physics of Semiconductors “Jaszowiec” 2016, Szczyrk, Poland, 18-24 June, 2016 . vol. 130 , Institute of Physics, Polish Academy of Sciences , pp. 1224-1228 , 45th International School and Conference on the Physics of Semiconductors “Jaszowiec” 2016, Szczyrk , Poland , 18/06/16 . https://doi.org/10.12693/APhysPolA.130.1224 | en |
dc.identifier.citation | conference | en |
dc.identifier.uri | https://hdl.handle.net/10023/9999 | |
dc.description.abstract | Room temperature carrier kinetics has been investigated in the type-II W-design AlSb/InAs/Ga0:80In0:20As0:15Sb0:85/InAs/AlSb quantum well emitting in the mid-infrared spectral range (at 2.54 μm). A timeresolved reflectance technique, employing the non-degenerated pump-probe scheme, has been used as a main experimental tool. Based on that, a primary carrier relaxation time of 2:3 ± 0:2 ps has been found, and attributed to the initial carrier cooling process within the quantum well states, while going towards the ground state via the carrier-optical phonon scattering mechanism. The decay of a quasi-equilibrium carrier population at the quantum well ground states is primarily governed by two relaxation channels: (i) radiative recombination within distribution of spatially separated electrons and holes that occurs in the nanosecond time scale, and (ii) the hole tunnelling out of its confining potential, characterized by a 240 ± 10 ps time constant. | |
dc.format.extent | 5 | |
dc.format.extent | 1154472 | |
dc.language.iso | eng | |
dc.publisher | Institute of Physics, Polish Academy of Sciences | |
dc.relation.ispartof | Acta Physica Polonica A | en |
dc.subject | QB Astronomy | en |
dc.subject | QC Physics | en |
dc.subject | Physics and Astronomy(all) | en |
dc.subject | NDAS | en |
dc.subject.lcc | QB | en |
dc.subject.lcc | QC | en |
dc.title | Room temperature carrier kinetics in the W-type GaInAsSb/InAs/AlSb quantum well structure emitting in mid-infrared spectral range | en |
dc.type | Conference item | en |
dc.contributor.institution | University of St Andrews. School of Physics and Astronomy | en |
dc.contributor.institution | University of St Andrews. Condensed Matter Physics | en |
dc.identifier.doi | 10.12693/APhysPolA.130.1224 |
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