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Room temperature carrier kinetics in the W-type GaInAsSb/InAs/AlSb quantum well structure emitting in mid-infrared spectral range
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dc.contributor.author | Syperek, M. | |
dc.contributor.author | Ryczko, K. | |
dc.contributor.author | Dallner, M. | |
dc.contributor.author | Dyksik, M. | |
dc.contributor.author | Motyka, M. | |
dc.contributor.author | Kamp, M. | |
dc.contributor.author | Höfling, S. | |
dc.contributor.author | Misiewicz, J. | |
dc.contributor.author | Sȩk, G. | |
dc.contributor.editor | Sawicki, Maciej | |
dc.contributor.editor | Witkowski, Bartłomiej S. | |
dc.date.accessioned | 2016-12-21T12:30:12Z | |
dc.date.available | 2016-12-21T12:30:12Z | |
dc.date.issued | 2016-11-01 | |
dc.identifier.citation | Syperek , M , Ryczko , K , Dallner , M , Dyksik , M , Motyka , M , Kamp , M , Höfling , S , Misiewicz , J & Sȩk , G 2016 , Room temperature carrier kinetics in the W-type GaInAsSb/InAs/AlSb quantum well structure emitting in mid-infrared spectral range . in M Sawicki & B S Witkowski (eds) , Acta Physica Polonica A : Proceedings of the 45th International School and Conference on the Physics of Semiconductors “Jaszowiec” 2016, Szczyrk, Poland, 18-24 June, 2016 . vol. 130 , Institute of Physics, Polish Academy of Sciences , pp. 1224-1228 , 45th International School and Conference on the Physics of Semiconductors “Jaszowiec” 2016, Szczyrk , Poland , 18/06/16 . https://doi.org/10.12693/APhysPolA.130.1224 | en |
dc.identifier.citation | conference | en |
dc.identifier.other | PURE: 248203489 | |
dc.identifier.other | PURE UUID: 9f4da85a-1b03-4797-adb6-cebbe1874485 | |
dc.identifier.other | Scopus: 84999040116 | |
dc.identifier.other | WOS: 000389065300019 | |
dc.identifier.uri | https://hdl.handle.net/10023/9999 | |
dc.description.abstract | Room temperature carrier kinetics has been investigated in the type-II W-design AlSb/InAs/Ga0:80In0:20As0:15Sb0:85/InAs/AlSb quantum well emitting in the mid-infrared spectral range (at 2.54 μm). A timeresolved reflectance technique, employing the non-degenerated pump-probe scheme, has been used as a main experimental tool. Based on that, a primary carrier relaxation time of 2:3 ± 0:2 ps has been found, and attributed to the initial carrier cooling process within the quantum well states, while going towards the ground state via the carrier-optical phonon scattering mechanism. The decay of a quasi-equilibrium carrier population at the quantum well ground states is primarily governed by two relaxation channels: (i) radiative recombination within distribution of spatially separated electrons and holes that occurs in the nanosecond time scale, and (ii) the hole tunnelling out of its confining potential, characterized by a 240 ± 10 ps time constant. | |
dc.format.extent | 5 | |
dc.language.iso | eng | |
dc.publisher | Institute of Physics, Polish Academy of Sciences | |
dc.relation.ispartof | Acta Physica Polonica A | en |
dc.rights | © 2016, Institute of Physics, Polish Academy of Sciences. This work has been made available online in accordance with the publisher’s policies. This is the final published version of the work, which was originally published at przyrbwn.icm.edu.pl / http://doi.org/10.12693/APhysPolA.130.1224 | en |
dc.subject | QB Astronomy | en |
dc.subject | QC Physics | en |
dc.subject | Physics and Astronomy(all) | en |
dc.subject | NDAS | en |
dc.subject.lcc | QB | en |
dc.subject.lcc | QC | en |
dc.title | Room temperature carrier kinetics in the W-type GaInAsSb/InAs/AlSb quantum well structure emitting in mid-infrared spectral range | en |
dc.type | Conference item | en |
dc.description.version | Publisher PDF | en |
dc.contributor.institution | University of St Andrews. School of Physics and Astronomy | en |
dc.contributor.institution | University of St Andrews. Condensed Matter Physics | en |
dc.identifier.doi | https://doi.org/10.12693/APhysPolA.130.1224 |
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