Room temperature carrier kinetics in the W-type GaInAsSb/InAs/AlSb quantum well structure emitting in mid-infrared spectral range
Abstract
Room temperature carrier kinetics has been investigated in the type-II W-design AlSb/InAs/Ga0:80In0:20As0:15Sb0:85/InAs/AlSb quantum well emitting in the mid-infrared spectral range (at 2.54 μm). A timeresolved reflectance technique, employing the non-degenerated pump-probe scheme, has been used as a main experimental tool. Based on that, a primary carrier relaxation time of 2:3 ± 0:2 ps has been found, and attributed to the initial carrier cooling process within the quantum well states, while going towards the ground state via the carrier-optical phonon scattering mechanism. The decay of a quasi-equilibrium carrier population at the quantum well ground states is primarily governed by two relaxation channels: (i) radiative recombination within distribution of spatially separated electrons and holes that occurs in the nanosecond time scale, and (ii) the hole tunnelling out of its confining potential, characterized by a 240 ± 10 ps time constant.
Citation
Syperek , M , Ryczko , K , Dallner , M , Dyksik , M , Motyka , M , Kamp , M , Höfling , S , Misiewicz , J & Sȩk , G 2016 , Room temperature carrier kinetics in the W-type GaInAsSb/InAs/AlSb quantum well structure emitting in mid-infrared spectral range . in M Sawicki & B S Witkowski (eds) , Acta Physica Polonica A : Proceedings of the 45th International School and Conference on the Physics of Semiconductors “Jaszowiec” 2016, Szczyrk, Poland, 18-24 June, 2016 . vol. 130 , Institute of Physics, Polish Academy of Sciences , pp. 1224-1228 , 45th International School and Conference on the Physics of Semiconductors “Jaszowiec” 2016, Szczyrk , Poland , 18/06/16 . https://doi.org/10.12693/APhysPolA.130.1224 conference
Publication
Acta Physica Polonica A
Type
Conference item
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