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Temperature dependency of resonance fluorescence from InAs/GaAs quantum dots : dephasing mechanisms
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dc.contributor.author | Zajac, Joanna M. | |
dc.contributor.author | Erlingsson, Sigurdur I. | |
dc.date.accessioned | 2016-08-16T08:30:17Z | |
dc.date.available | 2016-08-16T08:30:17Z | |
dc.date.issued | 2016-07-20 | |
dc.identifier.citation | Zajac , J M & Erlingsson , S I 2016 , ' Temperature dependency of resonance fluorescence from InAs/GaAs quantum dots : dephasing mechanisms ' , Physical Review. B, Condensed matter and materials physics , vol. 94 , no. 3 , 035432 . https://doi.org/10.1103/PhysRevB.94.035432 | en |
dc.identifier.issn | 1098-0121 | |
dc.identifier.other | PURE: 245053172 | |
dc.identifier.other | PURE UUID: a05981f2-e45a-4807-b33d-a1954810c866 | |
dc.identifier.other | Scopus: 84980315832 | |
dc.identifier.other | WOS: 000380100300005 | |
dc.identifier.uri | https://hdl.handle.net/10023/9309 | |
dc.description.abstract | We report a study on temperature-dependent resonant fluorescence from InAs/GaAs quantum dots. We combined spectral and temporal measurements in order to identify sources of dephasing. In the spectral domain, we observed temperature-dependent broadening of the zero-phonon line as 0.3 μeV/K, and a temperature-dependent phonon broadband. Time-resolved autocorrelation measurements revealed temperature-dependent spin pumping times between T1,s = 6 ns (4 K) and 0.5 ns (15 K). These results are compared against theoretical modeling with a master equation for a four-level system coupled to phonon and spin baths. We explained the results by phonon-mediated hole-spin scattering between two excited states, with the piezophonons as a dominant mechanism. | |
dc.format.extent | 7 | |
dc.language.iso | eng | |
dc.relation.ispartof | Physical Review. B, Condensed matter and materials physics | en |
dc.rights | © 2016 American Physical Society. This work is made available online in accordance with the publisher’s policies. This is the final published version of the work, which was originally published at: https://dx.doi.org/10.1103/PhysRevB.94.035432 | en |
dc.subject | QC Physics | en |
dc.subject | Condensed Matter Physics | en |
dc.subject | Electronic, Optical and Magnetic Materials | en |
dc.subject | NDAS | en |
dc.subject.lcc | QC | en |
dc.title | Temperature dependency of resonance fluorescence from InAs/GaAs quantum dots : dephasing mechanisms | en |
dc.type | Journal article | en |
dc.description.version | Publisher PDF | en |
dc.contributor.institution | University of St Andrews. School of Physics and Astronomy | en |
dc.identifier.doi | https://doi.org/10.1103/PhysRevB.94.035432 | |
dc.description.status | Peer reviewed | en |
dc.identifier.url | http://www.scopus.com/inward/record.url?scp=84980315832&partnerID=8YFLogxK | en |
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