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dc.contributor.authorZajac, Joanna M.
dc.contributor.authorErlingsson, Sigurdur I.
dc.date.accessioned2016-08-16T08:30:17Z
dc.date.available2016-08-16T08:30:17Z
dc.date.issued2016-07-20
dc.identifier.citationZajac , J M & Erlingsson , S I 2016 , ' Temperature dependency of resonance fluorescence from InAs/GaAs quantum dots : dephasing mechanisms ' Physical Review. B, Condensed matter and materials physics , vol. 94 , no. 3 , 035432 . https://doi.org/10.1103/PhysRevB.94.035432en
dc.identifier.issn1098-0121
dc.identifier.otherPURE: 245053172
dc.identifier.otherPURE UUID: a05981f2-e45a-4807-b33d-a1954810c866
dc.identifier.otherScopus: 84980315832
dc.identifier.urihttp://hdl.handle.net/10023/9309
dc.description.abstractWe report a study on temperature-dependent resonant fluorescence from InAs/GaAs quantum dots. We combined spectral and temporal measurements in order to identify sources of dephasing. In the spectral domain, we observed temperature-dependent broadening of the zero-phonon line as 0.3 μeV/K, and a temperature-dependent phonon broadband. Time-resolved autocorrelation measurements revealed temperature-dependent spin pumping times between T1,s = 6 ns (4 K) and 0.5 ns (15 K). These results are compared against theoretical modeling with a master equation for a four-level system coupled to phonon and spin baths. We explained the results by phonon-mediated hole-spin scattering between two excited states, with the piezophonons as a dominant mechanism.en
dc.format.extent7en
dc.language.isoeng
dc.relation.ispartofPhysical Review. B, Condensed matter and materials physicsen
dc.rights© 2016 American Physical Society. This work is made available online in accordance with the publisher’s policies. This is the final published version of the work, which was originally published at: https://dx.doi.org/10.1103/PhysRevB.94.035432en
dc.subjectQC Physicsen
dc.subjectCondensed Matter Physicsen
dc.subjectElectronic, Optical and Magnetic Materialsen
dc.subjectNDASen
dc.subject.lccQCen
dc.titleTemperature dependency of resonance fluorescence from InAs/GaAs quantum dots : dephasing mechanismsen
dc.typeJournal articleen
dc.description.versionPublisher PDFen
dc.contributor.institutionUniversity of St Andrews. School of Physics and Astronomyen
dc.identifier.doihttps://doi.org/10.1103/PhysRevB.94.035432
dc.description.statusPeer revieweden
dc.identifier.urlhttp://www.scopus.com/inward/record.url?scp=84980315832&partnerID=8YFLogxK


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