Temperature dependency of resonance fluorescence from InAs/GaAs quantum dots : dephasing mechanisms
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We report a study on temperature-dependent resonant fluorescence from InAs/GaAs quantum dots. We combined spectral and temporal measurements in order to identify sources of dephasing. In the spectral domain, we observed temperature-dependent broadening of the zero-phonon line as 0.3 μeV/K, and a temperature-dependent phonon broadband. Time-resolved autocorrelation measurements revealed temperature-dependent spin pumping times between T1,s = 6 ns (4 K) and 0.5 ns (15 K). These results are compared against theoretical modeling with a master equation for a four-level system coupled to phonon and spin baths. We explained the results by phonon-mediated hole-spin scattering between two excited states, with the piezophonons as a dominant mechanism.
Zajac , J M & Erlingsson , S I 2016 , ' Temperature dependency of resonance fluorescence from InAs/GaAs quantum dots : dephasing mechanisms ' , Physical Review. B, Condensed matter and materials physics , vol. 94 , no. 3 , 035432 . https://doi.org/10.1103/PhysRevB.94.035432
Physical Review. B, Condensed matter and materials physics
© 2016 American Physical Society. This work is made available online in accordance with the publisher’s policies. This is the final published version of the work, which was originally published at: https://dx.doi.org/10.1103/PhysRevB.94.035432
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