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Photoluminescence quenching mechanisms in type II InAs/GaInSb QWs on InAs substrates
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dc.contributor.author | Dyksik, M. | |
dc.contributor.author | Motyka, M. | |
dc.contributor.author | Kurka, M. | |
dc.contributor.author | Ryczko, K. | |
dc.contributor.author | Dallner, M. | |
dc.contributor.author | Höfling, S. | |
dc.contributor.author | Kamp, M. | |
dc.contributor.author | Sęk, G. | |
dc.contributor.author | Misiewicz, J. | |
dc.date.accessioned | 2016-08-15T10:30:13Z | |
dc.date.available | 2016-08-15T10:30:13Z | |
dc.date.issued | 2016-08 | |
dc.identifier | 245028336 | |
dc.identifier | f51cb92b-2b43-4cf7-b076-b06270f68fcd | |
dc.identifier | 84979896193 | |
dc.identifier | 000381086200030 | |
dc.identifier.citation | Dyksik , M , Motyka , M , Kurka , M , Ryczko , K , Dallner , M , Höfling , S , Kamp , M , Sęk , G & Misiewicz , J 2016 , ' Photoluminescence quenching mechanisms in type II InAs/GaInSb QWs on InAs substrates ' , Optical and Quantum Electronics , vol. 48 , 401 . https://doi.org/10.1007/s11082-016-0667-y | en |
dc.identifier.issn | 0306-8919 | |
dc.identifier.uri | https://hdl.handle.net/10023/9299 | |
dc.description | We would like to acknowledge the National Science Centre of Poland for support within Grant No. 2014/15/B/ST7/04663. | en |
dc.description.abstract | Optical properties of AlSb/InAs/GaInSb/InAs/AlSb quantum wells (QWs) grown on an InAs substrate were investigated from the point of view of room temperature emission in the mid- and long-wavelength infrared ranges. By means of two independent techniques of optical spectroscopy, photoreflectance and temperature-dependent photoluminescence, it was proven that the main process limiting the performance of such InAs substrate-based type II structures is related to the escape of carriers from the hole ground state of the QW. Two nonradiative recombination channels were identified. The main process was attributed to holes tunneling to the valence band of the GaAsSb spacing layer and the second one with trapping of holes by native defects located in the same layer. | |
dc.format.extent | 8 | |
dc.format.extent | 583428 | |
dc.language.iso | eng | |
dc.relation.ispartof | Optical and Quantum Electronics | en |
dc.subject | Fourier-transform spectroscopy | en |
dc.subject | Localized states | en |
dc.subject | Mid-infrared photoluminescence | en |
dc.subject | Type II quantum wells | en |
dc.subject | QC Physics | en |
dc.subject | Atomic and Molecular Physics, and Optics | en |
dc.subject | Electronic, Optical and Magnetic Materials | en |
dc.subject | Electrical and Electronic Engineering | en |
dc.subject | NDAS | en |
dc.subject.lcc | QC | en |
dc.title | Photoluminescence quenching mechanisms in type II InAs/GaInSb QWs on InAs substrates | en |
dc.type | Journal article | en |
dc.contributor.institution | University of St Andrews. School of Physics and Astronomy | en |
dc.contributor.institution | University of St Andrews. Condensed Matter Physics | en |
dc.identifier.doi | https://doi.org/10.1007/s11082-016-0667-y | |
dc.description.status | Peer reviewed | en |
dc.identifier.url | http://www.scopus.com/inward/record.url?scp=84979896193&partnerID=8YFLogxK | en |
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