Photoluminescence quenching mechanisms in type II InAs/GaInSb QWs on InAs substrates
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Optical properties of AlSb/InAs/GaInSb/InAs/AlSb quantum wells (QWs) grown on an InAs substrate were investigated from the point of view of room temperature emission in the mid- and long-wavelength infrared ranges. By means of two independent techniques of optical spectroscopy, photoreflectance and temperature-dependent photoluminescence, it was proven that the main process limiting the performance of such InAs substrate-based type II structures is related to the escape of carriers from the hole ground state of the QW. Two nonradiative recombination channels were identified. The main process was attributed to holes tunneling to the valence band of the GaAsSb spacing layer and the second one with trapping of holes by native defects located in the same layer.
Dyksik , M , Motyka , M , Kurka , M , Ryczko , K , Dallner , M , Höfling , S , Kamp , M , Sęk , G & Misiewicz , J 2016 , ' Photoluminescence quenching mechanisms in type II InAs/GaInSb QWs on InAs substrates ' Optical and Quantum Electronics , vol 48 , 401 . DOI: 10.1007/s11082-016-0667-y
Optical and Quantum Electronics
© The Author(s) 2016. Open Access. This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
We would like to acknowledge the National Science Centre of Poland for support within Grant No. 2014/15/B/ST7/04663.
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