Influence of carrier concentration on properties of InAs waveguide layers in interband cascade laser structures
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We present a characterization of doped InAs layers in interband cascade lasers exploiting the plasmon-enhanced waveguiding. Fast differential reflectance was employed in order to identify the plasma-edge frequency via the Berreman effect and shown as an advantageous method when compared to other types of measurements. The carrier concentration was then derived and compared with the nominal doping densities. The emission properties of the investigated structures were studied by means of photoluminescence (PL). Its full-width at half-maximum and integrated intensity were extracted from PL spectra and analyzed in the function of the doping density (carrier concentration). The PL linewidth was found to be independent of the carrier concentration indicating an insignificant contribution of doping to the structural properties deterioration. The PL intensity decay with the carrier concentration suggests being dominated by Auger recombination losses.
Dyksik , M , Motyka , M , Sęk , G , Misiewicz , J , Dallner , M , Hoefling , S & Kamp , M 2016 , ' Influence of carrier concentration on properties of InAs waveguide layers in interband cascade laser structures ' , Journal of Applied Physics , vol. 120 , no. 4 , 043104 . https://doi.org/10.1063/1.4958904
Journal of Applied Physics
© 2016, Publisher / the Authors. This work is made available online in accordance with the publisher’s policies. This is the author created, accepted version manuscript following peer review and may differ slightly from the final published version. The final published version of this work is available at http://dx.doi.org/10.1063/1.4958904
DescriptionThe work has supported by the European Commission within the Project WideLase (No. 318798) of the 7-th Framework Programme and by the National Science Center of Poland by the Grant No. 2014/15/B/ST7/04663.
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