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Holmium hafnate : an emerging electronic device material
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dc.contributor.author | Pavunny, Shojan P. | |
dc.contributor.author | Sharma, Yogesh | |
dc.contributor.author | Kooriyattil, Sudheendran | |
dc.contributor.author | Dugu, Sita | |
dc.contributor.author | Katiyar, Rajesh K. | |
dc.contributor.author | Scott, James F. | |
dc.contributor.author | Katiyar, Ram S. | |
dc.date.accessioned | 2016-05-17T13:30:07Z | |
dc.date.available | 2016-05-17T13:30:07Z | |
dc.date.issued | 2015-03-16 | |
dc.identifier | 223447208 | |
dc.identifier | 052dc650-af48-49ba-a9d9-ed6211a8c261 | |
dc.identifier | 000351595500032 | |
dc.identifier | 84925063984 | |
dc.identifier.citation | Pavunny , S P , Sharma , Y , Kooriyattil , S , Dugu , S , Katiyar , R K , Scott , J F & Katiyar , R S 2015 , ' Holmium hafnate : an emerging electronic device material ' , Applied Physics Letters , vol. 106 , no. 11 , 112902 . https://doi.org/10.1063/1.4915503 | en |
dc.identifier.issn | 0003-6951 | |
dc.identifier.uri | https://hdl.handle.net/10023/8815 | |
dc.description | Financial support from DOE Grant No. DE-FG02-08ER46526 is acknowledged. S.P.P. is grateful to NSF for financial assistance under Grant No. NSF-EFRI RESTOR #1038272. Y.S. is thankful to IFN-NSF for doctoral fellowship under NSF-RII-0701525 grant. | en |
dc.description.abstract | We report structural, optical, charge transport, and temperature properties as well as the frequency dependence of the dielectric constant of Ho2Hf2O7 (HHO) which make this material desirable as an alternative high-k dielectric for future silicon technology devices. A high dielectric constant of similar to 20 and very low dielectric loss of similar to 0.1% are temperature and voltage independent at 100 kHz near ambient conditions. The Pt/HHO/Pt capacitor exhibits exceptionally low Schottky emission-based leakage currents. In combination with the large observed bandgap Eg of 5.6 eV, determined by diffuse reflectance spectroscopy, our results reveal fundamental physics and materials science of the HHO metal oxide and its potential application as a high-k dielectric for the next generation of complementary metal-oxide-semiconductor devices. | |
dc.format.extent | 5 | |
dc.format.extent | 1424508 | |
dc.language.iso | eng | |
dc.relation.ispartof | Applied Physics Letters | en |
dc.subject | Pyrochlores | en |
dc.subject | QC Physics | en |
dc.subject | NDAS | en |
dc.subject.lcc | QC | en |
dc.title | Holmium hafnate : an emerging electronic device material | en |
dc.type | Journal article | en |
dc.contributor.institution | University of St Andrews. School of Chemistry | en |
dc.contributor.institution | University of St Andrews. School of Physics and Astronomy | en |
dc.identifier.doi | 10.1063/1.4915503 | |
dc.description.status | Peer reviewed | en |
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