Holmium hafnate : an emerging electronic device material
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We report structural, optical, charge transport, and temperature properties as well as the frequency dependence of the dielectric constant of Ho2Hf2O7 (HHO) which make this material desirable as an alternative high-k dielectric for future silicon technology devices. A high dielectric constant of similar to 20 and very low dielectric loss of similar to 0.1% are temperature and voltage independent at 100 kHz near ambient conditions. The Pt/HHO/Pt capacitor exhibits exceptionally low Schottky emission-based leakage currents. In combination with the large observed bandgap Eg of 5.6 eV, determined by diffuse reflectance spectroscopy, our results reveal fundamental physics and materials science of the HHO metal oxide and its potential application as a high-k dielectric for the next generation of complementary metal-oxide-semiconductor devices.
Pavunny , S P , Sharma , Y , Kooriyattil , S , Dugu , S , Katiyar , R K , Scott , J F & Katiyar , R S 2015 , ' Holmium hafnate : an emerging electronic device material ' Applied Physics Letters , vol 106 , no. 11 , 112902 . DOI: 10.1063/1.4915503
Applied Physics Letters
© 2015 AIP Publishing LLC. This work is made available online in accordance with the publisher’s policies. This is the final published version of the work, which was originally published at: https://dx.doi.org/10.1063/1.4915503
Financial support from DOE Grant No. DE-FG02-08ER46526 is acknowledged. S.P.P. is grateful to NSF for financial assistance under Grant No. NSF-EFRI RESTOR #1038272. Y.S. is thankful to IFN-NSF for doctoral fellowship under NSF-RII-0701525 grant.
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