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dc.contributor.authorMacias-Montero, M
dc.contributor.authorAskari, S
dc.contributor.authorMitra, S
dc.contributor.authorRocks, C
dc.contributor.authorNi, Chengsheng
dc.contributor.authorSvrcek, V
dc.contributor.authorConnor, Paul Alexander
dc.contributor.authorMaguire, P
dc.contributor.authorIrvine, John Thomas Sirr
dc.contributor.authorMariotti, D
dc.date.accessioned2016-03-22T17:00:05Z
dc.date.available2016-03-22T17:00:05Z
dc.date.issued2016-03-17
dc.identifier.citationMacias-Montero , M , Askari , S , Mitra , S , Rocks , C , Ni , C , Svrcek , V , Connor , P A , Maguire , P , Irvine , J T S & Mariotti , D 2016 , ' Energy band diagram of device-grade silicon nanocrystals ' , Nanoscale , vol. 8 , no. 12 , pp. 6623-8 . https://doi.org/10.1039/c5nr07705ben
dc.identifier.issn2040-3364
dc.identifier.otherPURE: 241576883
dc.identifier.otherPURE UUID: c16d6ce5-452a-4f9c-974e-9eb0e40d8d37
dc.identifier.otherPubMed: 26939617
dc.identifier.otherScopus: 84964237505
dc.identifier.otherORCID: /0000-0002-1492-7590/work/60427194
dc.identifier.otherWOS: 000372851500047
dc.identifier.otherORCID: /0000-0002-8394-3359/work/68280650
dc.identifier.urihttp://hdl.handle.net/10023/8463
dc.descriptionThis work was supported by the EPSRC (EP/K022237/1) and the Leverhulme International Network (IN-2012-136). SA would like to acknowledge the support of the Ulster University Vice-Chancellor's Research Studentship and CR that of the NI-DEL studentship.en
dc.description.abstractDevice grade silicon nanocrystals (NCs) are synthesized using an atmospheric-pressure plasma technique. The Si NCs have a small and well defined size of about 2.3 nm. The synthesis system allows for the direct creation of thin films, enabling a range of measurements to be performed and easy implementation of this material in different devices. The chemical stability of the Si NCs is evaluated, showing relatively long-term durability thanks to hydrogen surface terminations. Optical and electrical characterization techniques, including Kelvin probe, ultraviolet photoemission spectroscopy and Mott-Schottky analysis, are employed to determine the energy band diagram of the Si NCs.
dc.format.extent6
dc.language.isoeng
dc.relation.ispartofNanoscaleen
dc.rightsCopyright 2016 the Authors. This article is licensed under a Creative Commons Attribution 3.0 Unported Licence (http://creativecommons.org/licenses/by/3.0/)en
dc.subjectQD Chemistryen
dc.subjectNDASen
dc.subject.lccQDen
dc.titleEnergy band diagram of device-grade silicon nanocrystalsen
dc.typeJournal articleen
dc.description.versionPublisher PDFen
dc.contributor.institutionUniversity of St Andrews.School of Chemistryen
dc.contributor.institutionUniversity of St Andrews.St Andrews Sustainability Instituteen
dc.contributor.institutionUniversity of St Andrews.EaSTCHEMen
dc.identifier.doihttps://doi.org/10.1039/c5nr07705b
dc.description.statusPeer revieweden
dc.identifier.urlhttp://www.rsc.org/suppdata/c5/nr/c5nr07705b/c5nr07705b1.pdfen


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