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Energy band diagram of device-grade silicon nanocrystals

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Irvine_2016_Nanoscale_Energy_CCBY.pdf (1.889Mb)
Date
17/03/2016
Author
Macias-Montero, M
Askari, S
Mitra, S
Rocks, C
Ni, Chengsheng
Svrcek, V
Connor, Paul Alexander
Maguire, P
Irvine, John Thomas Sirr
Mariotti, D
Keywords
QD Chemistry
NDAS
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Abstract
Device grade silicon nanocrystals (NCs) are synthesized using an atmospheric-pressure plasma technique. The Si NCs have a small and well defined size of about 2.3 nm. The synthesis system allows for the direct creation of thin films, enabling a range of measurements to be performed and easy implementation of this material in different devices. The chemical stability of the Si NCs is evaluated, showing relatively long-term durability thanks to hydrogen surface terminations. Optical and electrical characterization techniques, including Kelvin probe, ultraviolet photoemission spectroscopy and Mott-Schottky analysis, are employed to determine the energy band diagram of the Si NCs.
Citation
Macias-Montero , M , Askari , S , Mitra , S , Rocks , C , Ni , C , Svrcek , V , Connor , P A , Maguire , P , Irvine , J T S & Mariotti , D 2016 , ' Energy band diagram of device-grade silicon nanocrystals ' , Nanoscale , vol. 8 , no. 12 , pp. 6623-8 . https://doi.org/10.1039/c5nr07705b
Publication
Nanoscale
Status
Peer reviewed
DOI
https://doi.org/10.1039/c5nr07705b
ISSN
2040-3364
Type
Journal article
Rights
Copyright 2016 the Authors. This article is licensed under a Creative Commons Attribution 3.0 Unported Licence (http://creativecommons.org/licenses/by/3.0/)
Description
This work was supported by the EPSRC (EP/K022237/1) and the Leverhulme International Network (IN-2012-136). SA would like to acknowledge the support of the Ulster University Vice-Chancellor's Research Studentship and CR that of the NI-DEL studentship.
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  • University of St Andrews Research
URL
http://www.rsc.org/suppdata/c5/nr/c5nr07705b/c5nr07705b1.pdf
URI
http://hdl.handle.net/10023/8463

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