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(In,Ga)As/GaP electrical injection quantum dot laser

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dc.contributor.authorHeidemann, M.
dc.contributor.authorHöfling, S.
dc.contributor.authorKamp, M.
dc.date.accessioned2016-02-08T11:40:06Z
dc.date.available2016-02-08T11:40:06Z
dc.date.issued2014-01-06
dc.identifier.citationHeidemann , M , Höfling , S & Kamp , M 2014 , ' (In,Ga)As/GaP electrical injection quantum dot laser ' , Applied Physics Letters , vol. 104 , no. 1 , 011113 . https://doi.org/10.1063/1.4860982en
dc.identifier.issn0003-6951
dc.identifier.otherPURE: 99257286
dc.identifier.otherPURE UUID: a5e99369-e06d-4df0-b272-9410fdbd80ad
dc.identifier.otherWOS: 000329838800013
dc.identifier.otherScopus: 84892156166
dc.identifier.urihttp://hdl.handle.net/10023/8174
dc.description.abstractThe paper reports on the realization of multilayer (In,Ga)As/GaP quantum dot (QD) lasers grown by gas source molecular beam epitaxy. The QDs have been embedded in (Al,Ga)P/GaP waveguide structures. Laser operation at 710 nm is obtained for broad area laser devices with a threshold current density of 4.4 kA/cm2 at a heat-sink temperature of 80 K.
dc.format.extent4
dc.language.isoeng
dc.relation.ispartofApplied Physics Lettersen
dc.rights© 2014 AIP Publishing LLC. This work is made available online in accordance with the publisher’s policies. This is the final published version of the work, which was originally published at http://dx.doi.org/10.1063/1.4860982en
dc.subjectMolecular-beam epitaxyen
dc.subjectCompound semiconductorsen
dc.subjectConduction-banden
dc.subjectSiliconen
dc.subjectAlloysen
dc.subjectSystemen
dc.subjectDiodesen
dc.subjectQC Physicsen
dc.subject.lccQCen
dc.title(In,Ga)As/GaP electrical injection quantum dot laseren
dc.typeJournal articleen
dc.description.versionPublisher PDFen
dc.contributor.institutionUniversity of St Andrews. School of Physics and Astronomyen
dc.contributor.institutionUniversity of St Andrews. Condensed Matter Physicsen
dc.identifier.doihttps://doi.org/10.1063/1.4860982
dc.description.statusPeer revieweden


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