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(In,Ga)As/GaP electrical injection quantum dot laser

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dc.contributor.authorHeidemann, M.
dc.contributor.authorHöfling, S.
dc.contributor.authorKamp, M.
dc.date.accessioned2016-02-08T11:40:06Z
dc.date.available2016-02-08T11:40:06Z
dc.date.issued2014-01-06
dc.identifier99257286
dc.identifiera5e99369-e06d-4df0-b272-9410fdbd80ad
dc.identifier000329838800013
dc.identifier84892156166
dc.identifier.citationHeidemann , M , Höfling , S & Kamp , M 2014 , ' (In,Ga)As/GaP electrical injection quantum dot laser ' , Applied Physics Letters , vol. 104 , no. 1 , 011113 . https://doi.org/10.1063/1.4860982en
dc.identifier.issn0003-6951
dc.identifier.urihttps://hdl.handle.net/10023/8174
dc.description.abstractThe paper reports on the realization of multilayer (In,Ga)As/GaP quantum dot (QD) lasers grown by gas source molecular beam epitaxy. The QDs have been embedded in (Al,Ga)P/GaP waveguide structures. Laser operation at 710 nm is obtained for broad area laser devices with a threshold current density of 4.4 kA/cm2 at a heat-sink temperature of 80 K.
dc.format.extent4
dc.format.extent1277590
dc.language.isoeng
dc.relation.ispartofApplied Physics Lettersen
dc.subjectMolecular-beam epitaxyen
dc.subjectCompound semiconductorsen
dc.subjectConduction-banden
dc.subjectSiliconen
dc.subjectAlloysen
dc.subjectSystemen
dc.subjectDiodesen
dc.subjectQC Physicsen
dc.subject.lccQCen
dc.title(In,Ga)As/GaP electrical injection quantum dot laseren
dc.typeJournal articleen
dc.contributor.institutionUniversity of St Andrews. School of Physics and Astronomyen
dc.contributor.institutionUniversity of St Andrews. Condensed Matter Physicsen
dc.identifier.doi10.1063/1.4860982
dc.description.statusPeer revieweden


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