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(In,Ga)As/GaP electrical injection quantum dot laser

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Hoefling_2014_APL_ElectircalInjection_FinalPubVersion.pdf (1.218Mb)
Date
06/01/2014
Author
Heidemann, M.
Höfling, S.
Kamp, M.
Keywords
Molecular-beam epitaxy
Compound semiconductors
Conduction-band
Silicon
Alloys
System
Diodes
QC Physics
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Abstract
The paper reports on the realization of multilayer (In,Ga)As/GaP quantum dot (QD) lasers grown by gas source molecular beam epitaxy. The QDs have been embedded in (Al,Ga)P/GaP waveguide structures. Laser operation at 710 nm is obtained for broad area laser devices with a threshold current density of 4.4 kA/cm2 at a heat-sink temperature of 80 K.
Citation
Heidemann , M , Höfling , S & Kamp , M 2014 , ' (In,Ga)As/GaP electrical injection quantum dot laser ' , Applied Physics Letters , vol. 104 , no. 1 , 011113 . https://doi.org/10.1063/1.4860982
Publication
Applied Physics Letters
Status
Peer reviewed
DOI
https://doi.org/10.1063/1.4860982
ISSN
0003-6951
Type
Journal article
Rights
© 2014 AIP Publishing LLC. This work is made available online in accordance with the publisher’s policies. This is the final published version of the work, which was originally published at http://dx.doi.org/10.1063/1.4860982
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  • University of St Andrews Research
URI
http://hdl.handle.net/10023/8174

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