(In,Ga)As/GaP electrical injection quantum dot laser

Heidemann, M.; Höfling, S.; Kamp, M.

View/Open

Hoefling_2014_APL_ElectircalInjection_FinalPubVersion.pdf (1.218Mb)

Date

06/01/2014

Altmetrics Handle Statistics

Altmetrics DOI Statistics

Abstract

The paper reports on the realization of multilayer (In,Ga)As/GaP quantum dot (QD) lasers grown by gas source molecular beam epitaxy. The QDs have been embedded in (Al,Ga)P/GaP waveguide structures. Laser operation at 710 nm is obtained for broad area laser devices with a threshold current density of 4.4 kA/cm2 at a heat-sink temperature of 80 K.

Citation

Heidemann , M , Höfling , S & Kamp , M 2014 , ' (In,Ga)As/GaP electrical injection quantum dot laser ' , Applied Physics Letters , vol. 104 , no. 1 , 011113 . https://doi.org/10.1063/1.4860982

Publication

Applied Physics Letters

Status

Peer reviewed

DOI

https://doi.org/10.1063/1.4860982

ISSN

0003-6951

Type

Journal article

Rights

© 2014 AIP Publishing LLC. This work is made available online in accordance with the publisher’s policies. This is the final published version of the work, which was originally published at http://dx.doi.org/10.1063/1.4860982

Collections

University of St Andrews Research

URI

http://hdl.handle.net/10023/8174