(In,Ga)As/GaP electrical injection quantum dot laser
Abstract
The paper reports on the realization of multilayer (In,Ga)As/GaP quantum dot (QD) lasers grown by gas source molecular beam epitaxy. The QDs have been embedded in (Al,Ga)P/GaP waveguide structures. Laser operation at 710 nm is obtained for broad area laser devices with a threshold current density of 4.4 kA/cm2 at a heat-sink temperature of 80 K.
Citation
Heidemann , M , Höfling , S & Kamp , M 2014 , ' (In,Ga)As/GaP electrical injection quantum dot laser ' Applied Physics Letters , vol 104 , no. 1 , 011113 . DOI: 10.1063/1.4860982
Version
Publisher PDF
Publication
Applied Physics Letters
Status
Peer reviewed
ISSN
0003-6951Type
Journal article
Rights
© 2014 AIP Publishing LLC. This work is made available online in accordance with the publisher’s policies. This is the final published version of the work, which was originally published at http://dx.doi.org/10.1063/1.4860982
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