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Single photon emission of a charge-tunable GaAs/Al0.25Ga0.75As droplet quantum dot device

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dc.contributor.authorLanger, Fabian
dc.contributor.authorPlischke, David
dc.contributor.authorKamp, Martin
dc.contributor.authorHoefling, Sven
dc.date.accessioned2016-02-08T11:10:07Z
dc.date.available2016-02-08T11:10:07Z
dc.date.issued2014-08-28
dc.identifier157932357
dc.identifier9ff84ee2-e3bb-4547-a603-d064b1105a8c
dc.identifier000342753500012
dc.identifier84907338316
dc.identifier000342753500012
dc.identifier.citationLanger , F , Plischke , D , Kamp , M & Hoefling , S 2014 , ' Single photon emission of a charge-tunable GaAs/Al 0.25 Ga 0.75 As droplet quantum dot device ' , Applied Physics Letters , vol. 105 , no. 8 , 081111 . https://doi.org/10.1063/1.4894372en
dc.identifier.issn0003-6951
dc.identifier.urihttps://hdl.handle.net/10023/8173
dc.descriptionThis work was financially supported by the Bundesministerium fűr Bildung und Forschung (BMBF) within the Project “QuaHL-Rep” under Contract No. (FKZ) 01BQ1042.en
dc.description.abstractIn this work, we report the fabrication of a charge-tunable GaAs/Al0.25Ga0.75As quantum dot (QD) device containing QDs deposited by modified droplet epitaxy producing almost strain and composition gradient free QDs. We obtained a QD density in the low 109 cm-2 range that enables us to perform spectroscopy on single droplet QDs showing linewidths as narrow as 40 μeV. The integration of the QDs into a Schottky diode allows us to controllably charge a single QD with up to four electrons, while non-classical photoluminescence is proven by photon auto-correlation measurements showing photon-antibunching (g(2)(0) = 0.05).
dc.format.extent5
dc.format.extent1534419
dc.language.isoeng
dc.relation.ispartofApplied Physics Lettersen
dc.subjectEpitaxyen
dc.titleSingle photon emission of a charge-tunable GaAs/Al0.25Ga0.75As droplet quantum dot deviceen
dc.typeJournal articleen
dc.contributor.institutionUniversity of St Andrews. School of Physics and Astronomyen
dc.contributor.institutionUniversity of St Andrews. Condensed Matter Physicsen
dc.identifier.doi10.1063/1.4894372
dc.description.statusPeer revieweden


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