Single photon emission of a charge-tunable GaAs/Al0.25Ga0.75As droplet quantum dot device
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In this work, we report the fabrication of a charge-tunable GaAs/Al0.25Ga0.75As quantum dot (QD) device containing QDs deposited by modified droplet epitaxy producing almost strain and composition gradient free QDs. We obtained a QD density in the low 109 cm-2 range that enables us to perform spectroscopy on single droplet QDs showing linewidths as narrow as 40 μeV. The integration of the QDs into a Schottky diode allows us to controllably charge a single QD with up to four electrons, while non-classical photoluminescence is proven by photon auto-correlation measurements showing photon-antibunching (g(2)(0) = 0.05).
Langer , F , Plischke , D , Kamp , M & Hoefling , S 2014 , ' Single photon emission of a charge-tunable GaAs/Al 0.25 Ga 0.75 As droplet quantum dot device ' Applied Physics Letters , vol 105 , no. 8 , 081111 . DOI: 10.1063/1.4894372
Applied Physics Letters
© 2014 AIP Publishing LLC.This work is made available online in accordance with the publisher’s policies. This is the final published version of the work, which was originally published at http://dx.doi.org/10.1063/1.4894372.
This work was financially supported by the Bundesministerium fűr Bildung und Forschung (BMBF) within the Project “QuaHL-Rep” under Contract No. (FKZ) 01BQ1042.
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