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dc.contributor.authorLanger, F.
dc.contributor.authorPerl, S.
dc.contributor.authorHöfling, S.
dc.contributor.authorKamp, M.
dc.date.accessioned2016-02-05T15:40:09Z
dc.date.available2016-02-05T15:40:09Z
dc.date.issued2015-06-08
dc.identifier.citationLanger , F , Perl , S , Höfling , S & Kamp , M 2015 , ' Graded band gap GaInNAs solar cells ' , Applied Physics Letters , vol. 106 , no. 23 , 233902 , pp. 1-5 . https://doi.org/10.1063/1.4922279en
dc.identifier.issn0003-6951
dc.identifier.otherPURE: 240813048
dc.identifier.otherPURE UUID: d69d6363-b171-43f7-813f-d1a869d108ce
dc.identifier.otherBibtex: urn:58668825f3832bdbe4fd69210096eaef
dc.identifier.otherScopus: 84931281674
dc.identifier.otherWOS: 000356170900059
dc.identifier.urihttps://hdl.handle.net/10023/8156
dc.descriptionThis work was financially supported by the “Deutsches Zentrum für Luft- und Raumfahrt e.V.” (DLR) under the project “Solarzellenkonzepte für Raumfahrtgeneratoren der nächsten Generation” (SoNG, Contract No. 50RN1301). S.H. gratefully acknowledges the support by the Royal Society and the Wolfson Foundation.en
dc.description.abstractDilute nitride GaInN(Sb)As with a band gap (Eg) of 1.0 eV is a promising material for the integration in next generation multijunction solar cells. We have investigated the effect of a compositionally graded GaInNAs absorber layer on the spectral response of a GaInNAs sub cell. We produced band gap gradings (ΔEg) of up to 39 meV across a 1 μm thick GaInNAs layer. Thereby, the external quantum efficiency—compared to reference cells—was increased due to the improved extraction of photo-generated carriers from 34.0% to 36.7% for the wavelength range from 900 nm to 1150 nm. However, this device figure improvement is accompanied by a small decrease in the open circuit voltage of about 20 mV and the shift of the absorption edge to shorter wavelengths.
dc.format.extent5
dc.language.isoeng
dc.relation.ispartofApplied Physics Lettersen
dc.rights© 2015 AIP Publishing LLC. This work is made available online in accordance with the publisher’s policies. This is the final published version of the work, which was originally published at http://dx.doi.org/10.1063/1.4922279 .en
dc.subjectQC Physicsen
dc.subjectNDASen
dc.subject.lccQCen
dc.titleGraded band gap GaInNAs solar cellsen
dc.typeJournal articleen
dc.contributor.sponsorThe Royal Societyen
dc.description.versionPublisher PDFen
dc.contributor.institutionUniversity of St Andrews. School of Physics and Astronomyen
dc.contributor.institutionUniversity of St Andrews. Condensed Matter Physicsen
dc.identifier.doihttps://doi.org/10.1063/1.4922279
dc.description.statusPeer revieweden
dc.identifier.grantnumbern/aen


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