Graded band gap GaInNAs solar cells
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Dilute nitride GaInN(Sb)As with a band gap (Eg) of 1.0 eV is a promising material for the integration in next generation multijunction solar cells. We have investigated the effect of a compositionally graded GaInNAs absorber layer on the spectral response of a GaInNAs sub cell. We produced band gap gradings (ΔEg) of up to 39 meV across a 1 μm thick GaInNAs layer. Thereby, the external quantum efficiency—compared to reference cells—was increased due to the improved extraction of photo-generated carriers from 34.0% to 36.7% for the wavelength range from 900 nm to 1150 nm. However, this device figure improvement is accompanied by a small decrease in the open circuit voltage of about 20 mV and the shift of the absorption edge to shorter wavelengths.
Langer , F , Perl , S , Höfling , S & Kamp , M 2015 , ' Graded band gap GaInNAs solar cells ' , Applied Physics Letters , vol. 106 , no. 23 , 233902 , pp. 1-5 . https://doi.org/10.1063/1.4922279
Applied Physics Letters
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DescriptionThis work was financially supported by the “Deutsches Zentrum für Luft- und Raumfahrt e.V.” (DLR) under the project “Solarzellenkonzepte für Raumfahrtgeneratoren der nächsten Generation” (SoNG, Contract No. 50RN1301). S.H. gratefully acknowledges the support by the Royal Society and the Wolfson Foundation.
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