Graded band gap GaInNAs solar cells
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Dilute nitride GaInN(Sb)As with a band gap (Eg) of 1.0 eV is a promising material for the integration in next generation multijunction solar cells. We have investigated the effect of a compositionally graded GaInNAs absorber layer on the spectral response of a GaInNAs sub cell. We produced band gap gradings (ΔEg) of up to 39 meV across a 1 μm thick GaInNAs layer. Thereby, the external quantum efficiency—compared to reference cells—was increased due to the improved extraction of photo-generated carriers from 34.0% to 36.7% for the wavelength range from 900 nm to 1150 nm. However, this device figure improvement is accompanied by a small decrease in the open circuit voltage of about 20 mV and the shift of the absorption edge to shorter wavelengths.
Langer , F , Perl , S , Höfling , S & Kamp , M 2015 , ' Graded band gap GaInNAs solar cells ' Applied Physics Letters , vol 106 , no. 23 , 233902 , pp. 1-5 . DOI: 10.1063/1.4922279
Applied Physics Letters
© 2015 AIP Publishing LLC. This work is made available online in accordance with the publisher’s policies. This is the final published version of the work, which was originally published at http://dx.doi.org/10.1063/1.4922279 .
This work was financially supported by the “Deutsches Zentrum für Luft- und Raumfahrt e.V.” (DLR) under the project “Solarzellenkonzepte für Raumfahrtgeneratoren der nächsten Generation” (SoNG, Contract No. 50RN1301). S.H. gratefully acknowledges the support by the Royal Society and the Wolfson Foundation.