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dc.contributor.authorPfenning, A.
dc.contributor.authorHartmann, F.
dc.contributor.authorRebello Sousa Dias, M.
dc.contributor.authorLanger, F.
dc.contributor.authorKamp, M.
dc.contributor.authorCastelano, L.K.
dc.contributor.authorLopez-Richard, V.
dc.contributor.authorMarques, G.E.
dc.contributor.authorHöfling, Sven
dc.contributor.authorWorschech, L.
dc.date.accessioned2015-10-06T15:10:01Z
dc.date.available2015-10-06T15:10:01Z
dc.date.issued2015-08-24
dc.identifier.citationPfenning , A , Hartmann , F , Rebello Sousa Dias , M , Langer , F , Kamp , M , Castelano , L K , Lopez-Richard , V , Marques , G E , Höfling , S & Worschech , L 2015 , ' Photocurrent-voltage relation of resonant tunneling diode photodetectors ' , Applied Physics Letters , vol. 107 , no. 8 , 081104 . https://doi.org/10.1063/1.4929424en
dc.identifier.issn0003-6951
dc.identifier.otherPURE: 221897901
dc.identifier.otherPURE UUID: a4865e8c-2613-4b69-ad06-77272774ede4
dc.identifier.otherScopus: 84940118795
dc.identifier.otherWOS: 000360593900004
dc.identifier.urihttp://hdl.handle.net/10023/7616
dc.descriptionThe authors are grateful for financial support by the BMBF via national project EIPHRIK (FKZ: 13N10710), the European Union (FPVII (2007-2013) under Grant Agreement No. 318287 LANDAUER), and the Brazilian Agencies FAPESP (2012/51415-3 and 2012/13052-6), CNPq and CAPES.en
dc.description.abstractWe have investigated photodetectors based on an AlGaAs/GaAs double barrier structure with a nearby lattice-matched GaInNAs absorption layer. Photons with the telecommunication wavelength λ=1.3 μm lead to hole accumulation close to the double barrier inducing a voltage shift ΔV(V) of the current-voltage curve, which depends strongly on the bias voltage V. A model is proposed describing ΔV(V) and the photocurrent response in excellent agreement with the experimental observations. According to the model, an interplay of the resonant tunneling diode (RTD) quantum efficiency η(V), the lifetime of photogenerated and accumulated charge carriers τ(V), and the RTD current-voltage relation in the dark determines best working parameters of RTD photodetectors. Limitations and voltage dependencies of the photoresponse are discussed.
dc.language.isoeng
dc.relation.ispartofApplied Physics Lettersen
dc.rightsCopyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in volume 107 of Applied Physics Letters and may be found at http://dx.doi.org/10.1063/1.4929424en
dc.subjectQC Physicsen
dc.subjectNDASen
dc.subject.lccQCen
dc.titlePhotocurrent-voltage relation of resonant tunneling diode photodetectorsen
dc.typeJournal articleen
dc.description.versionPublisher PDFen
dc.contributor.institutionUniversity of St Andrews.School of Physics and Astronomyen
dc.contributor.institutionUniversity of St Andrews.Condensed Matter Physicsen
dc.identifier.doihttps://doi.org/10.1063/1.4929424
dc.description.statusPeer revieweden


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