Photocurrent-voltage relation of resonant tunneling diode photodetectors
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We have investigated photodetectors based on an AlGaAs/GaAs double barrier structure with a nearby lattice-matched GaInNAs absorption layer. Photons with the telecommunication wavelength λ=1.3 μm lead to hole accumulation close to the double barrier inducing a voltage shift ΔV(V) of the current-voltage curve, which depends strongly on the bias voltage V. A model is proposed describing ΔV(V) and the photocurrent response in excellent agreement with the experimental observations. According to the model, an interplay of the resonant tunneling diode (RTD) quantum efficiency η(V), the lifetime of photogenerated and accumulated charge carriers τ(V), and the RTD current-voltage relation in the dark determines best working parameters of RTD photodetectors. Limitations and voltage dependencies of the photoresponse are discussed.
Pfenning , A , Hartmann , F , Rebello Sousa Dias , M , Langer , F , Kamp , M , Castelano , L K , Lopez-Richard , V , Marques , G E , Höfling , S & Worschech , L 2015 , ' Photocurrent-voltage relation of resonant tunneling diode photodetectors ' Applied Physics Letters , vol 107 , no. 8 , 081104 . DOI: 10.1063/1.4929424
Applied Physics Letters
Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in volume 107 of Applied Physics Letters and may be found at http://dx.doi.org/10.1063/1.4929424
The authors are grateful for financial support by the BMBF via national project EIPHRIK (FKZ: 13N10710), the European Union (FPVII (2007-2013) under Grant Agreement No. 318287 LANDAUER), and the Brazilian Agencies FAPESP (2012/51415-3 and 2012/13052-6), CNPq and CAPES.
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