Single photon emission up to liquid nitrogen temperature from charged excitons confined in GaAs-based epitaxial nanostructures
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We demonstrate a non-classical photon emitter at near infrared wavelength based on a single (In,Ga)As/GaAs epitaxially grown columnar quantum dot. Charged exciton complexes have been identified in magneto-photoluminescence. Photon auto-correlation histograms from the recombination of a trion confined in a columnar dot exhibit sub-Poissonian statistics with an antibunching dip yielding g(2)(0) values of 0.28 and 0.46 at temperature of 10 and 80 K, respectively. Our experimental findings allow considering the GaAs-based columnar quantum dot structure as an efficient single photon source operating at above liquid nitrogen temperatures, which in some characteristics can outperform the existing solutions of any material system.
Dusanowski , Ł , Syperek , M , Maryński , A , Li , L H , Misiewicz , J , Höfling , S , Kamp , M , Fiore , A & Sęk , G 2015 , ' Single photon emission up to liquid nitrogen temperature from charged excitons confined in GaAs-based epitaxial nanostructures ' Applied Physics Letters , vol 106 , no. 23 , 233107 . DOI: 10.1063/1.4922455
Applied Physics Letters
© 2015 AIP Publishing LLC. Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied Physics Letters and may be found at http://dx.doi.org/10.1063/1.4922455
This research was supported by the National Science Center Grant No. 2011/01/B/ST3/02379. The experiments have partly been performed within the NLTK infrastructure, Project No. POIG. 02.02.00-003/08-00. S.H. gratefully acknowledges support by the Royal Society and the Wolfson Foundation. Date of Acceptance: 01/06/2015