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Electrical conduction and optical properties of doped SOI Photonic Crystals

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dc.contributor.authorCardile, Paolo
dc.contributor.authorFranzo, Giorgia
dc.contributor.authorLo Savio, Roberto
dc.contributor.authorGalli, Matteo
dc.contributor.authorKrauss, Thomas Fraser
dc.contributor.authorPriolo, Francesco
dc.contributor.authorO'Faolain, Liam
dc.date.accessioned2014-01-10T10:31:08Z
dc.date.available2014-01-10T10:31:08Z
dc.date.issued2011-05
dc.identifier.citationCardile , P , Franzo , G , Lo Savio , R , Galli , M , Krauss , T F , Priolo , F & O'Faolain , L 2011 , ' Electrical conduction and optical properties of doped SOI Photonic Crystals ' , Applied Physics Letters , vol. 98 , no. 20 , 203506 . https://doi.org/10.1063/1.3580613en
dc.identifier.issn0003-6951
dc.identifier.otherPURE: 18002532
dc.identifier.otherPURE UUID: e0c74a5f-0bbc-4d13-ba0c-a1863999748b
dc.identifier.otherScopus: 79957538786
dc.identifier.urihttps://hdl.handle.net/10023/4343
dc.description.abstractWe investigate the electrical properties of silicon-on-insulator (SOI) photonic crystals as a function of both doping level and air filling factor. The resistance trends can be clearly explained by the presence of a depletion region around the sidewalls of the holes that is caused by band pinning at the surface. To understand the trade-off between the carrier transport and the optical losses due to free electrons in the doped SOI, we also measured the resonant modes of L3 photonic crystal nanocavities and found that surprisingly high doping levels, up to 10(18)/cm(3), are acceptable for practical devices with Q factors as high as 4×10(4).
dc.language.isoeng
dc.relation.ispartofApplied Physics Lettersen
dc.rightsCopyright 2011, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, Vol 98, Issue 20, and may be found at: http://scitation.aip.org/content/aip/journal/apl/98/20/10.1063/1.3580613en
dc.subjectDopingen
dc.subjectPhotonic crystalsen
dc.subjectElectrical resistivityen
dc.subjectPhotonic crystal devicesen
dc.titleElectrical conduction and optical properties of doped SOI Photonic Crystalsen
dc.typeJournal articleen
dc.contributor.sponsorEPSRCen
dc.description.versionPublisher PDFen
dc.contributor.institutionUniversity of St Andrews. School of Physics and Astronomyen
dc.contributor.institutionUniversity of St Andrews. Microphotonics and Photonic Crystals Groupen
dc.identifier.doihttps://doi.org/10.1063/1.3580613
dc.description.statusPeer revieweden
dc.identifier.grantnumberEP/H00680X/1en


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