Electrical conduction and optical properties of doped SOI Photonic Crystals
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We investigate the electrical properties of silicon-on-insulator (SOI) photonic crystals as a function of both doping level and air filling factor. The resistance trends can be clearly explained by the presence of a depletion region around the sidewalls of the holes that is caused by band pinning at the surface. To understand the trade-off between the carrier transport and the optical losses due to free electrons in the doped SOI, we also measured the resonant modes of L3 photonic crystal nanocavities and found that surprisingly high doping levels, up to 10(18)/cm(3), are acceptable for practical devices with Q factors as high as 4×10(4).
Cardile , P , Franzo , G , Lo Savio , R , Galli , M , Krauss , T F , Priolo , F & O'Faolain , L 2011 , ' Electrical conduction and optical properties of doped SOI Photonic Crystals ' Applied Physics Letters , vol 98 , no. 20 , 203506 . DOI: 10.1063/1.3580613
Applied Physics Letters
Copyright 2011, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, Vol 98, Issue 20, and may be found at: http://scitation.aip.org/content/aip/journal/apl/98/20/10.1063/1.3580613
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