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dc.contributor.authorRauch, C.
dc.contributor.authorTuomisto, F.
dc.contributor.authorKing, P. D. C.
dc.contributor.authorVeal, T. D.
dc.contributor.authorLu, H.
dc.contributor.authorSchaff, W. J.
dc.date.accessioned2014-01-10T09:31:01Z
dc.date.available2014-01-10T09:31:01Z
dc.date.issued2012-07
dc.identifier.citationRauch , C , Tuomisto , F , King , P D C , Veal , T D , Lu , H & Schaff , W J 2012 , ' Self-compensation in highly n-type InN ' , Applied Physics Letters , vol. 101 , no. 1 , 011903 . https://doi.org/10.1063/1.4732508en
dc.identifier.issn0003-6951
dc.identifier.otherPURE: 41247662
dc.identifier.otherPURE UUID: 2d227ed9-ce41-475c-a0c2-7c8462432ec2
dc.identifier.otherWOS: 000306144800016
dc.identifier.otherScopus: 84863669054
dc.identifier.urihttp://hdl.handle.net/10023/4337
dc.descriptionThis work has been supported by the European Commission under the 7th Framework Program through the Marie Curie Initial Training Network RAINBOW, Contract No. PITN-Ga-2008-213238, the Engineering and Physical Sciences Research Council, UK, under Grant No. EP/G004447/1, and the Academy of Finland.en
dc.description.abstractAcceptor-type defects in highly n-type InN are probed using positron annihilation spectroscopy. Results are compared to Hall effect measurements and calculated electron mobilities. Based on this, self-compensation in n-type InN is studied, and the microscopic origin of compensating and scattering centers in irradiated and Si-doped InN is discussed. We find significant compensation through negatively charged indium vacancy complexes as well as additional acceptor-type defects with no or small effective open volume, which act as scattering centers in highly n-type InN samples.
dc.format.extent4
dc.language.isoeng
dc.relation.ispartofApplied Physics Lettersen
dc.rightsCopyright 2012, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, Vol 101, No 1, and may be found at: http://scitation.aip.org/content/aip/journal/apl/101/1/10.1063/1.4732508en
dc.subjectPositronsen
dc.subjectCarrier mobilityen
dc.subjectElectron captureen
dc.subjectElectron mobilityen
dc.subjectDoppler effecten
dc.titleSelf-compensation in highly n-type InNen
dc.typeJournal articleen
dc.description.versionPublisher PDFen
dc.contributor.institutionUniversity of St Andrews.School of Physics and Astronomyen
dc.contributor.institutionUniversity of St Andrews.Condensed Matter Physicsen
dc.identifier.doihttps://doi.org/10.1063/1.4732508
dc.description.statusPeer revieweden


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