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Self-compensation in highly n-type InN

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dc.contributor.authorRauch, C.
dc.contributor.authorTuomisto, F.
dc.contributor.authorKing, P. D. C.
dc.contributor.authorVeal, T. D.
dc.contributor.authorLu, H.
dc.contributor.authorSchaff, W. J.
dc.date.accessioned2014-01-10T09:31:01Z
dc.date.available2014-01-10T09:31:01Z
dc.date.issued2012-07
dc.identifier41247662
dc.identifier2d227ed9-ce41-475c-a0c2-7c8462432ec2
dc.identifier000306144800016
dc.identifier84863669054
dc.identifier.citationRauch , C , Tuomisto , F , King , P D C , Veal , T D , Lu , H & Schaff , W J 2012 , ' Self-compensation in highly n-type InN ' , Applied Physics Letters , vol. 101 , no. 1 , 011903 . https://doi.org/10.1063/1.4732508en
dc.identifier.issn0003-6951
dc.identifier.urihttps://hdl.handle.net/10023/4337
dc.descriptionThis work has been supported by the European Commission under the 7th Framework Program through the Marie Curie Initial Training Network RAINBOW, Contract No. PITN-Ga-2008-213238, the Engineering and Physical Sciences Research Council, UK, under Grant No. EP/G004447/1, and the Academy of Finland.en
dc.description.abstractAcceptor-type defects in highly n-type InN are probed using positron annihilation spectroscopy. Results are compared to Hall effect measurements and calculated electron mobilities. Based on this, self-compensation in n-type InN is studied, and the microscopic origin of compensating and scattering centers in irradiated and Si-doped InN is discussed. We find significant compensation through negatively charged indium vacancy complexes as well as additional acceptor-type defects with no or small effective open volume, which act as scattering centers in highly n-type InN samples.
dc.format.extent4
dc.format.extent490603
dc.language.isoeng
dc.relation.ispartofApplied Physics Lettersen
dc.subjectPositronsen
dc.subjectCarrier mobilityen
dc.subjectElectron captureen
dc.subjectElectron mobilityen
dc.subjectDoppler effecten
dc.titleSelf-compensation in highly n-type InNen
dc.typeJournal articleen
dc.contributor.institutionUniversity of St Andrews. School of Physics and Astronomyen
dc.contributor.institutionUniversity of St Andrews. Condensed Matter Physicsen
dc.identifier.doihttps://doi.org/10.1063/1.4732508
dc.description.statusPeer revieweden


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