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Self-compensation in highly n-type InN
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dc.contributor.author | Rauch, C. | |
dc.contributor.author | Tuomisto, F. | |
dc.contributor.author | King, P. D. C. | |
dc.contributor.author | Veal, T. D. | |
dc.contributor.author | Lu, H. | |
dc.contributor.author | Schaff, W. J. | |
dc.date.accessioned | 2014-01-10T09:31:01Z | |
dc.date.available | 2014-01-10T09:31:01Z | |
dc.date.issued | 2012-07 | |
dc.identifier | 41247662 | |
dc.identifier | 2d227ed9-ce41-475c-a0c2-7c8462432ec2 | |
dc.identifier | 000306144800016 | |
dc.identifier | 84863669054 | |
dc.identifier.citation | Rauch , C , Tuomisto , F , King , P D C , Veal , T D , Lu , H & Schaff , W J 2012 , ' Self-compensation in highly n-type InN ' , Applied Physics Letters , vol. 101 , no. 1 , 011903 . https://doi.org/10.1063/1.4732508 | en |
dc.identifier.issn | 0003-6951 | |
dc.identifier.uri | https://hdl.handle.net/10023/4337 | |
dc.description | This work has been supported by the European Commission under the 7th Framework Program through the Marie Curie Initial Training Network RAINBOW, Contract No. PITN-Ga-2008-213238, the Engineering and Physical Sciences Research Council, UK, under Grant No. EP/G004447/1, and the Academy of Finland. | en |
dc.description.abstract | Acceptor-type defects in highly n-type InN are probed using positron annihilation spectroscopy. Results are compared to Hall effect measurements and calculated electron mobilities. Based on this, self-compensation in n-type InN is studied, and the microscopic origin of compensating and scattering centers in irradiated and Si-doped InN is discussed. We find significant compensation through negatively charged indium vacancy complexes as well as additional acceptor-type defects with no or small effective open volume, which act as scattering centers in highly n-type InN samples. | |
dc.format.extent | 4 | |
dc.format.extent | 490603 | |
dc.language.iso | eng | |
dc.relation.ispartof | Applied Physics Letters | en |
dc.subject | Positrons | en |
dc.subject | Carrier mobility | en |
dc.subject | Electron capture | en |
dc.subject | Electron mobility | en |
dc.subject | Doppler effect | en |
dc.title | Self-compensation in highly n-type InN | en |
dc.type | Journal article | en |
dc.contributor.institution | University of St Andrews. School of Physics and Astronomy | en |
dc.contributor.institution | University of St Andrews. Condensed Matter Physics | en |
dc.identifier.doi | https://doi.org/10.1063/1.4732508 | |
dc.description.status | Peer reviewed | en |
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