Self-compensation in highly n-type InN
Abstract
Acceptor-type defects in highly n-type InN are probed using positron annihilation spectroscopy. Results are compared to Hall effect measurements and calculated electron mobilities. Based on this, self-compensation in n-type InN is studied, and the microscopic origin of compensating and scattering centers in irradiated and Si-doped InN is discussed. We find significant compensation through negatively charged indium vacancy complexes as well as additional acceptor-type defects with no or small effective open volume, which act as scattering centers in highly n-type InN samples.
Citation
Rauch , C , Tuomisto , F , King , P D C , Veal , T D , Lu , H & Schaff , W J 2012 , ' Self-compensation in highly n-type InN ' , Applied Physics Letters , vol. 101 , no. 1 , 011903 . https://doi.org/10.1063/1.4732508
Publication
Applied Physics Letters
Status
Peer reviewed
ISSN
0003-6951Type
Journal article
Rights
Copyright 2012, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, Vol 101, No 1, and may be found at: http://scitation.aip.org/content/aip/journal/apl/101/1/10.1063/1.4732508
Description
This work has been supported by the European Commission under the 7th Framework Program through the Marie Curie Initial Training Network RAINBOW, Contract No. PITN-Ga-2008-213238, the Engineering and Physical Sciences Research Council, UK, under Grant No. EP/G004447/1, and the Academy of Finland.Collections
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