Self-compensation in highly n-type InN
Abstract
Acceptor-type defects in highly n-type InN are probed using positron annihilation spectroscopy. Results are compared to Hall effect measurements and calculated electron mobilities. Based on this, self-compensation in n-type InN is studied, and the microscopic origin of compensating and scattering centers in irradiated and Si-doped InN is discussed. We find significant compensation through negatively charged indium vacancy complexes as well as additional acceptor-type defects with no or small effective open volume, which act as scattering centers in highly n-type InN samples.
Citation
Rauch , C , Tuomisto , F , King , P D C , Veal , T D , Lu , H & Schaff , W J 2012 , ' Self-compensation in highly n-type InN ' , Applied Physics Letters , vol. 101 , no. 1 , 011903 . https://doi.org/10.1063/1.4732508
Publication
Applied Physics Letters
Status
Peer reviewed
ISSN
0003-6951Type
Journal article
Description
This work has been supported by the European Commission under the 7th Framework Program through the Marie Curie Initial Training Network RAINBOW, Contract No. PITN-Ga-2008-213238, the Engineering and Physical Sciences Research Council, UK, under Grant No. EP/G004447/1, and the Academy of Finland.Collections
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