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Verification of band offsets and electron effective masses in GaAsN/GaAs quantum wells : Spectroscopic experiment versus 10-band k.p modeling
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dc.contributor.author | Ryczko, K. | |
dc.contributor.author | Sek, G. | |
dc.contributor.author | Sitarek, P. | |
dc.contributor.author | Mika, A. | |
dc.contributor.author | Misiewicz, J. | |
dc.contributor.author | Langer, F. | |
dc.contributor.author | Höfling, Sven | |
dc.contributor.author | Forchel, A. | |
dc.contributor.author | Kamp, M. | |
dc.date.accessioned | 2014-01-09T12:01:03Z | |
dc.date.available | 2014-01-09T12:01:03Z | |
dc.date.issued | 2013-06-21 | |
dc.identifier | 73410478 | |
dc.identifier | d3a444c4-8ded-4b10-9aec-17c666094b70 | |
dc.identifier | 000321011700018 | |
dc.identifier | 84880817496 | |
dc.identifier.citation | Ryczko , K , Sek , G , Sitarek , P , Mika , A , Misiewicz , J , Langer , F , Höfling , S , Forchel , A & Kamp , M 2013 , ' Verification of band offsets and electron effective masses in GaAsN/GaAs quantum wells : Spectroscopic experiment versus 10-band k.p modeling ' , Journal of Applied Physics , vol. 113 , no. 23 , 233508 . https://doi.org/10.1063/1.4810920 | en |
dc.identifier.issn | 0021-8979 | |
dc.identifier.uri | https://hdl.handle.net/10023/4329 | |
dc.description.abstract | Optical transitions in GaAs1-xNx/GaAs quantum wells (QWs) have been probed by two complementary techniques, modulation spectroscopy in a form of photoreflectance and surface photovoltage spectroscopy. Transition energies in QWs of various widths and N contents have been compared with the results of band structure calculations based on the 10-band k.p Hamiltonian. Due to the observation of higher order transitions in the measured spectra, the band gap discontinuities at the GaAsN/GaAs interface and the electron effective masses could be determined, both treated as semi-free parameters to get the best matching between the theoretical and experimental energies. We have obtained the chemical conduction band offset values of 86% for x = 1.2% and 83% for x = 2.2%, respectively. For these determined band offsets, the electron effective masses equal to about 0.09 m(o) in QWs with 1.2% N and 0.15 m(o) for the case of larger N content of 2.2%. | |
dc.format.extent | 7 | |
dc.format.extent | 975800 | |
dc.language.iso | eng | |
dc.relation.ispartof | Journal of Applied Physics | en |
dc.subject | Surface photovoltage spectroscopy | en |
dc.subject | Conduction band | en |
dc.subject | Alloys | en |
dc.subject | GaAsN/GaAs | en |
dc.subject | Electroreflectance | en |
dc.subject | Nitrogen | en |
dc.subject | QC Physics | en |
dc.subject.lcc | QC | en |
dc.title | Verification of band offsets and electron effective masses in GaAsN/GaAs quantum wells : Spectroscopic experiment versus 10-band k.p modeling | en |
dc.type | Journal article | en |
dc.contributor.institution | University of St Andrews. School of Physics and Astronomy | en |
dc.contributor.institution | University of St Andrews. Condensed Matter Physics | en |
dc.identifier.doi | 10.1063/1.4810920 | |
dc.description.status | Peer reviewed | en |
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