Verification of band offsets and electron effective masses in GaAsN/GaAs quantum wells : Spectroscopic experiment versus 10-band k.p modeling
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Optical transitions in GaAs1-xNx/GaAs quantum wells (QWs) have been probed by two complementary techniques, modulation spectroscopy in a form of photoreflectance and surface photovoltage spectroscopy. Transition energies in QWs of various widths and N contents have been compared with the results of band structure calculations based on the 10-band k.p Hamiltonian. Due to the observation of higher order transitions in the measured spectra, the band gap discontinuities at the GaAsN/GaAs interface and the electron effective masses could be determined, both treated as semi-free parameters to get the best matching between the theoretical and experimental energies. We have obtained the chemical conduction band offset values of 86% for x = 1.2% and 83% for x = 2.2%, respectively. For these determined band offsets, the electron effective masses equal to about 0.09 m(o) in QWs with 1.2% N and 0.15 m(o) for the case of larger N content of 2.2%.
Ryczko , K , Sek , G , Sitarek , P , Mika , A , Misiewicz , J , Langer , F , Höfling , S , Forchel , A & Kamp , M 2013 , ' Verification of band offsets and electron effective masses in GaAsN/GaAs quantum wells : Spectroscopic experiment versus 10-band k.p modeling ' , Journal of Applied Physics , vol. 113 , no. 23 , 233508 . https://doi.org/10.1063/1.4810920
Journal of Applied Physics
Copyright 2013, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, Vol 113, Issue 23, and may be found at: http://scitation.aip.org/content/aip/journal/jap/113/23/10.1063/1.4810920