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Optical absorption by dilute GaNSb alloys : Influence of N pair states

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dc.contributor.authorMudd, J. J.
dc.contributor.authorKybert, N. J.
dc.contributor.authorLinhart, W. M.
dc.contributor.authorBuckle, L.
dc.contributor.authorAshley, T.
dc.contributor.authorKing, P. D. C.
dc.contributor.authorJones, T. S.
dc.contributor.authorAshwin, M. J.
dc.contributor.authorVeal, T. D.
dc.date.accessioned2014-01-08T16:01:01Z
dc.date.available2014-01-08T16:01:01Z
dc.date.issued2013-07-22
dc.identifier.citationMudd , J J , Kybert , N J , Linhart , W M , Buckle , L , Ashley , T , King , P D C , Jones , T S , Ashwin , M J & Veal , T D 2013 , ' Optical absorption by dilute GaNSb alloys : Influence of N pair states ' , Applied Physics Letters , vol. 103 , no. 4 , 042110 . https://doi.org/10.1063/1.4816519en
dc.identifier.issn0003-6951
dc.identifier.otherPURE: 70616848
dc.identifier.otherPURE UUID: a3897ac8-1560-4cb8-a226-bddd531b5076
dc.identifier.otherWOS: 000322406600049
dc.identifier.otherScopus: 84885006807
dc.identifier.urihttp://hdl.handle.net/10023/4324
dc.description.abstractThe optical properties of GaNSb alloys with N contents of up to 2.5% have been investigated at room temperature using infrared absorption spectroscopy. The evolution of the absorption onsets with N content has been described using a three level band anticrossing model of the N localized states interactions with the GaSb conduction band. This approach includes the effect of N pair states, which is critical to reproduce the observed optical properties. This confirms theoretical predictions that N pair states have a more pronounced effect on the band dispersion in GaNSb than in GaNAs.
dc.format.extent4
dc.language.isoeng
dc.relation.ispartofApplied Physics Lettersen
dc.rightsCopyright 2013, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, Vol 103, Issue 4, and may be found at: http://scitation.aip.org/content/aip/journal/apl/103/4/10.1063/1.4816519en
dc.subjectConduction bandsen
dc.subjectBand gapen
dc.subjectIII-V semiconductorsen
dc.subjectBand modelsen
dc.subjectAbsorption spectraen
dc.subjectValence bandsen
dc.titleOptical absorption by dilute GaNSb alloys : Influence of N pair statesen
dc.typeJournal articleen
dc.description.versionPublisher PDFen
dc.contributor.institutionUniversity of St Andrews. School of Physics and Astronomyen
dc.contributor.institutionUniversity of St Andrews. Condensed Matter Physicsen
dc.identifier.doihttps://doi.org/10.1063/1.4816519
dc.description.statusPeer revieweden


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