Optical absorption by dilute GaNSb alloys : Influence of N pair states

Mudd, J. J.; Kybert, N. J.; Linhart, W. M.; Buckle, L.; Ashley, T.; King, P. D. C.; Jones, T. S.; Ashwin, M. J.; Veal, T. D.

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Date

22/07/2013

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Abstract

The optical properties of GaNSb alloys with N contents of up to 2.5% have been investigated at room temperature using infrared absorption spectroscopy. The evolution of the absorption onsets with N content has been described using a three level band anticrossing model of the N localized states interactions with the GaSb conduction band. This approach includes the effect of N pair states, which is critical to reproduce the observed optical properties. This confirms theoretical predictions that N pair states have a more pronounced effect on the band dispersion in GaNSb than in GaNAs.

Citation

Mudd , J J , Kybert , N J , Linhart , W M , Buckle , L , Ashley , T , King , P D C , Jones , T S , Ashwin , M J & Veal , T D 2013 , ' Optical absorption by dilute GaNSb alloys : Influence of N pair states ' , Applied Physics Letters , vol. 103 , no. 4 , 042110 . https://doi.org/10.1063/1.4816519

Publication

Applied Physics Letters

Status

Peer reviewed

DOI

https://doi.org/10.1063/1.4816519

ISSN

0003-6951

Type

Journal article

Rights

Copyright 2013, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, Vol 103, Issue 4, and may be found at: http://scitation.aip.org/content/aip/journal/apl/103/4/10.1063/1.4816519

Collections

University of St Andrews Research

URI

http://hdl.handle.net/10023/4324