Optical absorption by dilute GaNSb alloys : Influence of N pair states
Abstract
The optical properties of GaNSb alloys with N contents of up to 2.5% have been investigated at room temperature using infrared absorption spectroscopy. The evolution of the absorption onsets with N content has been described using a three level band anticrossing model of the N localized states interactions with the GaSb conduction band. This approach includes the effect of N pair states, which is critical to reproduce the observed optical properties. This confirms theoretical predictions that N pair states have a more pronounced effect on the band dispersion in GaNSb than in GaNAs.
Citation
Mudd , J J , Kybert , N J , Linhart , W M , Buckle , L , Ashley , T , King , P D C , Jones , T S , Ashwin , M J & Veal , T D 2013 , ' Optical absorption by dilute GaNSb alloys : Influence of N pair states ' , Applied Physics Letters , vol. 103 , no. 4 , 042110 . https://doi.org/10.1063/1.4816519
Publication
Applied Physics Letters
Status
Peer reviewed
ISSN
0003-6951Type
Journal article
Collections
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