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dc.contributor.authorSchmutzler, J.
dc.contributor.authorVeit, F.
dc.contributor.authorAssmann, M.
dc.contributor.authorTempel, J. -S.
dc.contributor.authorHöfling, Sven
dc.contributor.authorKamp, M.
dc.contributor.authorForchel, A.
dc.contributor.authorBayer, M.
dc.date.accessioned2014-01-08T15:31:02Z
dc.date.available2014-01-08T15:31:02Z
dc.date.issued2013-02-25
dc.identifier73418144
dc.identifier35725f98-9755-445d-aab7-aa1392b92bf4
dc.identifier000315597000015
dc.identifier84874872282
dc.identifier.citationSchmutzler , J , Veit , F , Assmann , M , Tempel , J -S , Höfling , S , Kamp , M , Forchel , A & Bayer , M 2013 , ' Determination of operating parameters for a GaAs-based polariton laser ' , Applied Physics Letters , vol. 102 , no. 8 , 081115 . https://doi.org/10.1063/1.4794144en
dc.identifier.issn0003-6951
dc.identifier.urihttps://hdl.handle.net/10023/4321
dc.description.abstractWe report on a systematic study of the phase transitions to polariton condensation (PC) and further to cavity lasing in a GaAs-based microcavity with respect to exciton-cavity detuning and lattice temperature. Using far field and time-resolved spectroscopy, we determined the parameter space in which PC can be achieved and the corresponding variation of PC threshold power. We found a lower bound of -12 meV for the exciton-cavity detuning and an upper bound of 90 K for the lattice temperature.
dc.format.extent5
dc.format.extent1672876
dc.language.isoeng
dc.relation.ispartofApplied Physics Lettersen
dc.subjectBose-Einstein condensationen
dc.subjectPhotonic crystalsen
dc.subjectExcitation energiesen
dc.subjectPolaritonsen
dc.subjectOptical microcavitiesen
dc.titleDetermination of operating parameters for a GaAs-based polariton laseren
dc.typeJournal articleen
dc.contributor.institutionUniversity of St Andrews. School of Physics and Astronomyen
dc.contributor.institutionUniversity of St Andrews. Condensed Matter Physicsen
dc.identifier.doi10.1063/1.4794144
dc.description.statusPeer revieweden


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