Determination of operating parameters for a GaAs-based polariton laser

Schmutzler, J.; Veit, F.; Assmann, M.; Tempel, J. -S.; Höfling, Sven; Kamp, M.; Forchel, A.; Bayer, M.

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Date

25/02/2013

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Abstract

We report on a systematic study of the phase transitions to polariton condensation (PC) and further to cavity lasing in a GaAs-based microcavity with respect to exciton-cavity detuning and lattice temperature. Using far field and time-resolved spectroscopy, we determined the parameter space in which PC can be achieved and the corresponding variation of PC threshold power. We found a lower bound of -12 meV for the exciton-cavity detuning and an upper bound of 90 K for the lattice temperature.

Citation

Schmutzler , J , Veit , F , Assmann , M , Tempel , J -S , Höfling , S , Kamp , M , Forchel , A & Bayer , M 2013 , ' Determination of operating parameters for a GaAs-based polariton laser ' , Applied Physics Letters , vol. 102 , no. 8 , 081115 . https://doi.org/10.1063/1.4794144

Publication

Applied Physics Letters

Status

Peer reviewed

DOI

https://doi.org/10.1063/1.4794144

ISSN

0003-6951

Type

Journal article

Rights

Copyright 2013, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, Vol 102, Issue 8 and may be found at: http://scitation.aip.org/content/aip/journal/apl/102/8/10.1063/1.4794144

Collections

University of St Andrews Research

URI

http://hdl.handle.net/10023/4321