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dc.contributor.authorVaro, S
dc.contributor.authorLi, Xin
dc.contributor.authorJuska, G
dc.contributor.authorJahromi, I
dc.contributor.authorGocalinska, A
dc.contributor.authorDi Falco, Andrea
dc.contributor.authorPelucchi, E
dc.date.accessioned2021-12-11T00:44:43Z
dc.date.available2021-12-11T00:44:43Z
dc.date.issued2020-12-24
dc.identifier.citationVaro , S , Li , X , Juska , G , Jahromi , I , Gocalinska , A , Di Falco , A & Pelucchi , E 2020 , ' Planar semiconductor membranes with brightness-enhanced embedded quantum dots via electron beam induced deposition of 3D nanostructures : implications for solid state lighting ' , ACS Applied Nano Materials , vol. 3 , no. 12 , pp. 12401–12407 . https://doi.org/10.1021/acsanm.0c02969en
dc.identifier.issn2574-0970
dc.identifier.otherPURE: 271570211
dc.identifier.otherPURE UUID: d92362e9-35c8-41ed-9fa5-9db1e6996bd8
dc.identifier.otherORCID: /0000-0002-7338-8785/work/85855095
dc.identifier.otherWOS: 000603402500077
dc.identifier.otherScopus: 85098990129
dc.identifier.urihttps://hdl.handle.net/10023/24500
dc.descriptionFunding: This research was supported by Science Foundation Ireland under Grant Nos. 15/IA/2864, and 12/RC/2276_P2. ADF acknowledges support from EPSRC (EP/L017008/1) and ERC (Grant No. 819346).en
dc.description.abstractThe engineering of the surrounding photonic environment is one of the most successful approaches routinely used to increase light extraction efficiency and tune the properties of solid state sources of quantum light. However, results achieved so far have been hampered by the lack of a technology that allows for the straightforward fabrication of large scale 3D nano- and microfeatures, with very high resolution and sufficient flexibility in terms of available materials. In this paper we show that Electron Beam Induced Deposition can be a very promising approach to solve this issue, asexemplified by the fabrication of Pt and SiO2 nanofeatures on a membrane containing ordered arrays of site-controlled pyramidal quantum dots. Micro-photoluminescence has been used to compare the emission of the dots before and after the deposition of the structures, remarkably showing both a significant increase in the light extraction efficiency and no degradation of the spectral quality, implying that negligible damage has been caused to the emitter due to the deposition process. This paves the way for novel post-growth processing strategies for epitaxial quantum dots used in both quantum information technologies and lighting applications.
dc.language.isoeng
dc.relation.ispartofACS Applied Nano Materialsen
dc.rightsCopyright © 2020 American Chemical Society. This work has been made available online in accordance with publisher policies or with permission. Permission for further reuse of this content should be sought from the publisher or the rights holder. This is the author created accepted manuscript following peer review and may differ slightly from the final published version. The final published version of this work is available at https://doi.org/10.1021/acsanm.0c02969.en
dc.subjectQuantum dotsen
dc.subjectElectron beam induced dispositionen
dc.subjectMicrolensesen
dc.subjectAdditive manufacturingen
dc.subjectPhotonic trimmingen
dc.subjectQC Physicsen
dc.subjectTK Electrical engineering. Electronics Nuclear engineeringen
dc.subjectDASen
dc.subject.lccQCen
dc.subject.lccTKen
dc.titlePlanar semiconductor membranes with brightness-enhanced embedded quantum dots via electron beam induced deposition of 3D nanostructures : implications for solid state lightingen
dc.typeJournal articleen
dc.contributor.sponsorEPSRCen
dc.contributor.sponsorEuropean Research Councilen
dc.description.versionPostprinten
dc.description.versionPostprinten
dc.contributor.institutionUniversity of St Andrews. Centre for Biophotonicsen
dc.contributor.institutionUniversity of St Andrews. School of Physics and Astronomyen
dc.identifier.doihttps://doi.org/10.1021/acsanm.0c02969
dc.description.statusPeer revieweden
dc.date.embargoedUntil2021-12-11
dc.identifier.grantnumberep/l017008/1en
dc.identifier.grantnumber819346en


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